Related papers: Metallicity and Anomalous Hall Effect in Epitaxial…

The discovery of the anomalous Hall effect (AHE) in bulk metallic antiferromagnets (AFMs) motivates the search of the same phenomenon in two-dimensional (2D) systems, where a quantized anomalous Hall conductance can in principle be…

In a heavy fermion system, there exists the anomalous Hall effect caused by localized $f$-orbital freedom, in addition to the normal Hall effect due to the Lorentz force. In 1994, we found that the Hall coefficient caused by the anomalous…

Anomalous Hall effect (AHE), a protocol of various low-power dissipation quantum phenomena and a fundamental precursor of intriguing topological phases of matter, is usually observed in ferromagnetic materials with orthogonal configuration…

Epitaxially grown RuO2 films on TiO2 (110) exhibit significant in-plane strain anisotropy, with a compressive strain of - 4.7% along the [001] crystalline direction and a tensile strain of +2.3% along [1-10]. As the film thickness…

Magnetism and spin-orbit coupling (SOC) are two quintessential ingredients underlying novel topological transport phenomena in itinerant ferromagnets. When spin-polarized bands support nodal points/lines with band degeneracy that can be…

The anomalous Hall {\color{black} e}ffect (AHE) has emerged as a key indicator of time-reversal symmetry breaking (TRSB) and topological features in electronic band structures. Absent of a magnetic field, the AHE requires spontaneous TRSB…

We measure the anomalous Hall effect (AHE) resistivity $\rho_{xy}$ in thin films of the itinerant ferromagnet SrRuO$_{3}$. At low temperatures, the AHE coefficient $R_{s}$ varies with $\rho_{xx}^2$ in agreement with side jumps and Berry…

Altermagnets have recently emerged as a new class of magnetic materials that combine compensated magnetic order with spin-split electronic band structures. In this work, we employ molecular beam epitaxy to grow MnTe thin films with…

The Anomalous Hall Effect (AHE) manifests as a transverse voltage proportional to magnetization in ferromagnetic materials under the application of a charge current, being an indispensable tool for probing magnetism, especially in nanoscale…

In a magnetic metal, the Hall resistance is generally taken to be the sum of the ordinary Hall resistance and the anomalous Hall resistance. Here it is shown that this empirical relation is no longer valid when either the ordinary Hall…

The ability to control and manipulate time-reversal ($T$) symmetry-breaking phases with near-zero net magnetization is a sought-after goal in spintronic devices. The recently discovered hexagonal altermagnet manganese telluride…

The planar Hall effect (PHE), previously observed in Weyl and Dirac semimetals due to the chiral anomaly, emerges with a different origin in topological insulators (TIs), where in-plane magnetic fields induce resistivity anisotropy. In…

The anomalous Hall effect (AHE) in perpendicularly magnetized L10-Mn1.5Ga single-crystalline films is investigated as a function of degree of long-range chemical ordering and temperature. Our results provide firm evidence that phonons has…

We report on the observation of a possible topological Hall effect in thin films of the itinerant ferromagnet Eu1-xSmxTiO3. EuTiO3 and Eu0.955Sm0.045TiO3 films were grown by molecular beam epitaxy. The EuTiO3 film is insulating. The Hall…

Recent observation of anomalous Hall effect (AHE) induced by magnetic field or spin magnetization lying in the Hall deflection plane has sparked interest in diverse mechanisms for inducing the Hall vector component perpendicular to the…

Integration of transition metal dichalcogenides (TMDs) on ferromagnetic materials (FM) may yield fascinating physics and promise for electronics and spintronic applications. In this work, high-temperature anomalous Hall effect (AHE) in the…

Anomalous Hall effect (AHE) is the key transport signature unlocking topological properties of magnetic materials. While AHE is usually proportional to the magnetization, the nonlinearity suggests the existence of complex magnetic and…

We demonstrate precise control of magnetism in MnBi2Te4 thin films through careful synthesis by molecular beam epitaxy, achieving minimal defects and accurate layer thickness control. By optimizing Mn-Bi-Te ratios and growth temperatures,…

The anomalous Hall effect (AHE) is a topology-related transport phenomenon being of potential interest in spintronics, because this effect enables the efficient probe of magnetic orders (i.e., data readout in memory devices). It is well…

Anomalous Hall effect (AHE) plays important role in the rapidly developing field of antiferromagnetic spintronics. It has been recently discussed that it can be a feature of not only uncompensated magnetic systems but also in altermagnetic…