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With their fast response time and a spatial resolution in the range of a few microns, microchannel plates (MCPs) are a prominent choice for the development of detectors with highest resolution standards. Amorphous silicon-based microchannel…

Instrumentation and Detectors · Physics 2019-02-28 Janina Löffler , Christophe Ballif , Nicolas Wyrsch

By means of theoretical modeling and experimental synthesis and characterization, we investigate the structural properties of amorphous Zr-Si-C. Two chemical compositions are selected, Zr0.31Si0.29C0.40 and Zr0.60Si0.33C0.07. The amorphous…

We present an automated procedure for computing stacking fault energies in random alloys from large-scale simulations using moment tensor potentials (MTPs) with the accuracy of density functional theory (DFT). To that end, we develop an…

Materials Science · Physics 2021-11-23 Max Hodapp , Alexander Shapeev

By means of molecular dynamics simulations based on the Billeter et al. [S. R. Billeter, A. Curioni, D. Fischer, and W. Andreoni, Phys. Rev. B {\bf 73}, 155329] environment-dependent classical force field we studied the structural features…

Disordered Systems and Neural Networks · Physics 2015-05-27 Mariella Ippolito , Simone Meloni

High-entropy alloys (HEAs) exhibit exceptional properties arising from a combination of thermodynamic, kinetic and structural factors and have found applications in numerous fields such as aerospace, energy, chemical industries, hydrogen…

Materials Science · Physics 2025-11-18 Manish Sahoo , Akash Deshmukh , Yash Kokane , Jayaprakash H M , Raghavan Ranganathan

Using the recently-proposed ``activation-relaxation technique'' for optimizing complex structures, we develop a structural model appropriate to a-GaAs which is almost free of odd-membered rings, i.e., wrong bonds, and possesses an almost…

Materials Science · Physics 2009-10-28 Normand Mousseau , Laurent J. Lewis

The structural features of the interface between the cystalline and amorphous phases of Si solid are studied in simulations based on a combination of empirical interatomic potentials and a nonorthogonal tight-binding model. The…

Materials Science · Physics 2009-10-31 N. Bernstein , M. J. Aziz , E. Kaxiras

Dual-phase $\gamma$-TiAl and $\alpha_2$-Ti$_{3}$Al alloys exhibit high strength and creep resistance at high temperatures. However, they suffer from low tensile ductility and fracture toughness at room temperature. Experimental studies show…

Classical molecular-dynamics simulations have been carried out to investigate densification mechanisms in silicon dioxide thin films deposited on an amorphous silica surface, according to a simplified ion-beam assisted deposition (IBAD)…

Materials Science · Physics 2009-11-07 Alexis Lefevre , Laurent J. Lewis , Ludvik Martinu , Michael R. Wertheimer

We introduce machine-learned potentials for Ag-Pd to describe the energy of alloy configurations over a wide range of compositions. We compare two different approaches. Moment tensor potentials (MTP) are polynomial-like functions of…

Topological matter is a popular topic in both condensed matter and cold atom research. In the past decades, a variety of models have been identified with fascinating topological features. Some, but not all, of the models can be found in…

Quantum Gases · Physics 2017-01-20 Zhen Zheng , Han Pu , Xubo Zou , Guangcan Guo

In this study, a new alternative model algorithm has been proposed for assembling amorphous structures, unifying the bosonic paradigm applicable at low temperatures with crystalline models relevant at room and higher temperatures. Physical…

Materials Science · Physics 2026-02-02 A. Berezner , M. Rybakov , M. Sidlyar , V. Fedorov

Intrinsic hydrogenated amorphous silicon films can provide outstanding surface passivation of crystalline silicon wafer surfaces. This quality of Intrinsic hydrogenated amorphous silicon makes it valuable in heterojunction with intrinsic…

Applied Physics · Physics 2018-12-21 Rahul Goyal , Sachin Kumar

Amorphous Si (a-Si) nanostructures are ubiquitous in numerous electronic and optoelectronic devices. Amorphous materials are considered to possess the lower limit to the thermal conductivity (k), which is ~1 W/m-K for a-Si. However, recent…

Materials Science · Physics 2017-01-03 Soonshin Kwon , Jianlin Zheng , Matthew C. Wingert , Shuang Cui , Renkun Chen

Machine learning potential enables molecular dynamics simulations of systems beyond the capability of classical force fields. The traditional approach to develop structural sets for training machine learning potential typically generate a…

Computational Physics · Physics 2021-09-06 Nan Xu , Chen Li , Mandi Fang , Qing Shao , Yingying Lu , Yao Shi , Yi He

Ab initio simulations are capable of providing detailed information of material behavior at the nanoscale. Simulating experimentally relevant situations is, however, often computationally intense. Using hybrid approaches between ab initio…

Computational Physics · Physics 2019-03-26 Michael Sluydts , Michiel Larmuseau , Johan Lauwaert , Stefaan Cottenier

The silicon-hydrogen system is of key interest for solar-cell devices, including both crystalline and amorphous modifications. Elemental amorphous Si is now well understood, but the atomic-scale effects of hydrogenating the silicon matrix…

Materials Science · Physics 2025-10-20 Louise A. M. Rosset , Volker L. Deringer

We created 4 p-Si models and 4 p-Si:H models all with 50% porosity. The models contain 32, 108, 256 and 500 silicon atoms with a pore parallel to one of the simulational cell axes and a regular cross-section. We obtained the densities of…

Computational Physics · Physics 2011-08-18 E. R. L. Loustau , Ariel A. Valladares

We discuss an inverse approach for atomistic modeling of glassy materials. The focus is on structural modeling and electronic properties of hydrogenated amorphous silicon and glassy GeSe2 alloy. The work is based upon a new approach…

Disordered Systems and Neural Networks · Physics 2009-11-13 Parthapratim Biswas , D. A. Drabold

Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistance properties and can be deposited on a lot of different substrates. A-Si:H based particle detectors have been built since mid 1980s as planar p-i-n or Schottky diode…

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