Related papers: Charge to spin conversion in atomically thin bismu…
Anisotropic electronic transport is a possible route towards nanoscale circuitry design, particularly in two-dimensional materials. Proposals to introduce such a feature in patterned graphene have to date relied on large-scale structural…
The weak intrinsic spin-orbit coupling in graphene can be greatly enhanced by proximity coupling. Here we report on the proximity-induced spin-orbit coupling in graphene transferred by hexagonal boron nitride (hBN) onto the topological…
In this review we discuss spin and charge transport properties in graphene-based single-layer and few-layer spin-valve devices. We give an overview of challenges and recent advances in the field of device fabrication and discuss two of our…
As a topological Dirac semimetal with controllable spin-orbit coupling and conductivity, PtSe$_2$, a transition-metal dichalcogenide, is a promising material for several applications from optoelectric to sensors. However, its potential for…
The spin transport and spin-to-charge current conversion properties of bismuth are investigated using permalloy/copper/bismuth (Py/Cu/Bi)lateral spin valve structures. The spin current is strongly absorbed at the surface of Bi, leading to…
Long-distance spin transport through anti-ferromagnetic insulators (AFMIs) is a long-standing goal of spintronics research. Unlike conventional spintronics systems, monolayer graphene in quantum Hall regime (QH) offers an unprecedented…
One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find materials with high spin-to-charge conversion efficiency.…
Strong spin-orbit coupling, resulting in the formation of spin-momentum-locked surface states, endows topological insulators with superior spin-to-charge conversion characteristics, though the dynamics that govern it have remained elusive.…
The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and potential to create a spin field-effect transistor. However, for this reason, graphene was largely overlooked as a possible spin-charge…
We report efficient spin to charge conversion (SCC) in the topological insulator (TI) based heterostructure ($BiSbTe_{1.5}Se_{1.5}/Cu/Ni_{80}Fe_{20}$) by using spin-pumping technique where $BiSbTe_{1.5}Se_{1.5}$ is the TI and…
The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states has led to the observation of new electronic transport phenomena such as anomalously quantized…
Altermagnets, which exhibit the advantages of both antiferromagnets and ferromagnets, have attracted significant attention recently. Among them, ruthenium dioxide (RuO2), a prototypical altermagnet candidate, is under intensive debate on…
Bulk-boundary correspondence is a foundational principle underlying the electronic band structure and physical behavior of topological quantum materials. Although it has been rigorously tested in topological systems where the physical…
We investigate the details of the electronic structure in the neighborhoods of a carbon atom vacancy in graphene by employing magnetization-constrained density-functional theory on periodic slabs, and spin-exact, multi-reference,…
Electron systems that possess light-like dispersion relations or the conical Dirac spectrum, such as graphene and bismuth, have recently been shown to harbor unusual collective states in high magnetic fields. Such states are possible…
We report the first measurements of spin injection in to graphene through a 20 nm thick tungsten disulphide (WS$_2$) layer, along with a modified spin relaxation time ({\tau}s) in graphene in the WS$_2$ environment, via spin-valve and Hanle…
Using the charge-conserving Floquet-Green function approach to open quantum systems driven by external time periodic potential, we analyze how spin current pumped (in the absence of any dc bias voltage) by the precessing magnetization of a…
The control of recently observed spintronic effects in topological-insulator/ferromagnetic-metal (TI/FM) heterostructures is thwarted by the lack of understanding of band structure and spin texture around their interfaces. Here we combine…
Electronic carriers in graphene show a high carrier mobility at room temperature. Thus, this system is widely viewed as a potential future charge-based high-speed electronic-material to complement- or replace- silicon. At the same time, the…
Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort towards the development of fast and ultra-low power devices for the…