Related papers: Fermi Level and Light Driven Defect Generation in …
The effect of substrate bias and surface gate voltage on the low temperature resistivity of a Si-MOSFET is studied for electron concentrations where the resistivity increases with increasing temperature. This technique offers two degrees of…
We present a theoretical account of some of the most likely hydrogen-related reactions with impurities in n-type and p-type solar-grade silicon. These include reactions with dopants and carbon, which are relevant in the context of life-time…
The dependence of the transport properties on the specific location of the Fermi level in molecular electronics devices is studied by using electrodes of different materials. The zero-bias transport properties are shown to depend…
By combining surprising new results from a full polarization analysis of nodal angle-resolved photoemission data from pristine and modulation-free Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ with structural information from LEED and {\it ab initio}…
An in-depth analysis of valley physics in 2D materials like transition metal dichalcogenides requires the measurement of many material properties as a function of Fermi level position within the electronic band structure. This is normally…
Reliable anomaly detection in photovoltaic (PV) modules is critical for maintaining solar energy efficiency. However, developing robust computer vision models for PV inspection is constrained by the scarcity of large-scale, diverse, and…
The presence of interface recombination in a complex multilayered thin-film solar structure causes a disparity between the internal open-circuit voltage (VOC,in), measured by photoluminescence, and the external open-circuit voltage (VOC,ex)…
Numerical simulation of a solar cell can provide various information that can be useful to maximize its power conversion efficiency (PCE). In that respect we carried out a set of numerical simulation using AFORS-HET simulation program.…
Hydrogenated amorphous silicon (a-Si:H) is a material having an intrinsically high radiation hardness that can be deposited on flexible substrates like Polyimide. For these properties a-Si:H can be used for the production of flexible…
Recent advances in the characterization of hexagonal-diamond silicon (2H-Si) have shown that this material possesses remarkably different structural, electronic, and optical properties as compared to the common cubic-diamond (3C) polytype.…
The nature and concentration of defects near niobium-silicon interfaces prepared with different silicon surface treatments were characterized using current-voltage (I-V), deep level transient spectroscopy (DLTS), and secondary ion mass…
Photoreceptor devices have been fabricated for positive corona with multi-layer structure of glass/ZnO /i-a-SiC:H /i-a-Si:H /p-a-SiC:H /Al type by using dual chamber plasma enhanced chemical vapor deposition (PECVD) system. 10% Silane…
Mechanical shear deformations lead, in some cases, to effects similar to those resulting from ion irradiation. Here we characterize the effects of shear velocity and temperature on amorphous silicon (\aSi) modelled using classical molecular…
Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need…
We have performed an approximate ab initio calculation of vibrational properties of hydrogenated amorphous silicon (a-Si:H) using a molecular dynamics method. A 216 atom model for pure amorphous silicon (a-Si) has been employed as a…
The kinetics of E' centers induced in silica by 4.7eV laser irradiation was investigated observing in situ their optical absorption band at 5.8 eV. After exposure the defects decay due to reaction with diffusing molecular hydrogen of…
Optically-active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain and temperature. Current sensing techniques…
Quasi free standing monolayer graphene (QFMLG) grown on SiC by selective Si evaporation from the Si-rich SiC(0001) face and H intercalation displays irregularities in STM and AFM analysis, appearing as localized features, which we…
The mechanism of high temperature superconductivity in the iron-based superconductors remains an outstanding issue in condensed matter physics. The electronic structure, in particular the Fermi surface topology, is considered to play an…
Silicon Carbide (SiC) is a wide bandgap semiconductor material recently being used in replacement of traditional semiconductors for high-voltage power device applications. Radiation environments induce defects through displacement damage in…