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Rutile germanium dioxide (r-GeO2) is an ultra-wide bandgap semiconductor with potential for ambipolar doping, making it a promising candidate for next-generation power electronics and optoelectronics. Growth of phase-pure r-GeO2 films by…
Rutile germanium dioxide (r-GeO$_2$) is a promising ultra-wide bandgap (UWBG) semiconductor, offering a high theoretical Baliga figure of merit, potential for p-type doping, and favorable thermal and electrical properties. In this work, we…
Rutile germanium oxide (r-GeO2) has shown potential for ultrawide bandgap semiconductor applications such as power conversion and UV optoelectronics. Homoepitaxial substrates will be key for achieving phase pure and doped r-GeO2 thin films…
Rutile Germanium Dioxide (r-GeO$_2$) has been identified as an ultrawide bandgap (UWBG) semiconductor recently, featuring a bandgap of 4.68 eV, comparable to Ga$_2$O$_3$ but offering bipolar dopability, higher electron mobility, higher…
Rutile Germanium Dioxide (GeO2) has been recently theoretically identified as an ultrawide bandgap (UWBG) semiconductor with bandgap 4.68 eV similar to Ga2O3 but having bipolar dopability and ~2x higher electron mobility, Baliga figure of…
Rutile germanium dioxide (r-GeO2) has recently emerged as a promising ultrawide-bandgap (UWBG) semiconductor owing to its wide bandgap (~4.4-5.1 eV), ambipolar doping potential, and high theoretical thermal conductivity. However,…
Ultrawide-bandgap (UWBG) semiconductors, such as GeO$_2$, are gaining significant attention for their potential in high-performance applications, particularly in piezoelectric devices. Despite extensive research, a comprehensive…
Ultrawide bandgap (UWBG) semiconductors are promising for next-generation power electronics, largely attributed to their substantial bandgap and exceptional breakdown electric field. Rutile GeO2 (r-GeO2) emerges as a promising alternative,…
Metal organic chemical vapor deposition (MOCVD) is one of the main methodologies used for thin film fabrication in the semiconductor industry today and is considered one of the most promising routes to achieve large-scale and high-quality…
Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for new excitonic physics and next-generation electronics, creating a strong demand to understand their growth, doping, and…
We report on the growth and characterization of Ge-doped \b{eta}-Ga2O3 thin films using a solid germanium source. \b{eta}-Ga2O3 thin films were grown using a low-pressure chemical vapor deposition (LPCVD) reactor with either an oxygen or…
Transition metal dichalcogenides (TMDs) are van der Waals layered materials with sizable and tunable bandgaps, offering promising platforms for two-dimensional electronics and optoelectronics. To this end, the bottleneck is how to acquire…
Plasma-enhanced chemical vapor deposition (PECVD) of silicon dioxide (SiO$_2$) is widely used for low-temperature fabrication of dielectric thin films, yet its atomic-scale growth mechanisms remain incompletely understood. In this work, we…
Monolithic perovskite-silicon tandem solar cells experienced a significant increase in efficiency, making them viable for industrial applications. Among the various scalable and industry-compatible metal halide perovskite deposition…
Surface morphology of the substrate and bottom layers plays a critical role in the epitaxial growth of oxide thin films. Here, we report on the self-organized formation of a step-terrace structure in SrRuO3 (SRO) thin films grown using…
A 2D layer of spherical, crystalline Ge nanodots embedded in SiO2 was formed by low pressure chemical vapour deposition combined with furnace oxidation and rapid thermal annealing. The samples were characterized structurally by using…
Two-dimensional (2D) transition metal dichalcogenides (TMDCs), exemplified by molybdenum disulfide (MoS2), have shown exceptional potential for data-centred, energy-efficient electronic applications due to their unique electrical,…
Chemical vapor deposition (CVD) is a powerful method employed for high quality monolayer crystal growth of 2D transition metal dichalcogenides with much effort invested toward improving the growth process. Here, we report a novel method for…
We present an optimized seeded chemical vapor transport method for the growth of Cu$_{2}$OSeO$_{3}$ that allows for chemical control in a system with many stable phases to selectively produce large phase pure single crystals. This method is…
Two-dimensional magnetic materials (2D-MM) are an exciting playground for fundamental research, and for spintronics and quantum sensing. However, their large-grain large-area synthesis using scalable vapour deposition methods is still an…