Related papers: TCAD Simulation of Two Photon Absorption -- Transi…

The Two Photon Absorption - Transient Current Technique (TPA-TCT) was used to investigate a silicon strip detector with illumination from the top. Measurement and analysis techniques for the TPA-TCT of segmented devices are presented and…

Production of the High Granularity Timing Detector for the ATLAS experiment at High Luminosity LHC requires over 21000 silicon sensors based on Low Gain Avalanche Diode (LGAD) technology. Their radiation hardness is monitored as a part of…

The breakdown voltage of silicon sensors is known to be affected by the ambient humidity. To understand the sensor's humidity sensitivity, Synopsys TCAD was used to simulate n-in-p sensors for different effective relative humidities. Photon…

Recent developments in high-power ultrafast optical technology and emerging theoretical frameworks in strong-field quantum electrodynamics (SF-QED) are unveiling nuanced differentiations between the semi-classical and full quantum…

In the context of particle detectors, low-temperature covalent wafer-wafer bonding allows for integration of high-Z materials as absorbing layers with readout chips produced in standard CMOS processes. This enables for instance the…

Entangled two-photon absorption spectroscopy (TPA) has been widely recognized as a powerful tool for revealing relevant information about the structure of complex molecular systems. However, to date, the experimental implementation of this…

We present technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon TeraFETs, plasmonic field effect transistors (FETs), for terahertz (THz) detection validated over a wide dynamic range. The modeling…

Terahertz (THz) response of transistor and integrated circuit yields important information about device parameters and has been used for distinguishing between working and defective transistors and circuits. Using a TCAD model for SiGe HBTs…

This paper presents the detailed simulation of a double-pixel structure for charged particle detection based on the 3D-trench silicon sensor developed for the TIMESPOT project and a comparison of the simulation results with measurements…

During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense…

Radiation-hard silicon sensors used in high-energy physics require a high electric field and are susceptible to surface breakdown. This study aims to improve the understanding of the underlying mechanisms by developing new methods to probe…

The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density and overall lower power consumption compared to previously…

An ever-increasing demand for high-performance silicon sensors requires complex sensor designs that are challenging to simulate and model. The combination of electrostatic finite element simulations with a transient Monte Carlo approach…

Low Gain Avalanche Detectors (LGADs) are thin silicon detectors with moderate internal signal amplification and time resolution as good as 17 ps for minimum ionizing particles. However, the current major limiting factor in granularity is…

In the past decade, detection of THz radiation by plasma-wave-assisted frequency mixing in antenna-coupled field-effect transistors (TeraFETs) -- implemented in various semiconductor material systems (Si CMOS, GaN/AlGaN, GaAs/AlGaAs,…

A novel methodology, named the diffusion profile method, is proposed in this research to measure the electric field of a low gain avalanche detector (LGAD).The proposed methodology utilizes the maximum of the time derivative of the edge…

Three-dimensional (3D) pixel sensors are a promising technology for implementing the 4D-tracking paradigm in high-radiation environments. Despite their advantages in radiation tolerance, 3D pixel sensors exhibit non-uniform electric and…

The RD50-MPW4, a Depleted Monolithic Active Pixel Sensor (DMAPS) was analyzed using a Two Photon Absortion Transient Current Technique (TPA-TCT). This technique provides sensitivity maps with micrometer-scale spatial resolution, enabling…

This contribution presents the design, production, and initial testing of newly developed 4H-SiC Low Gain Avalanche Detectors (LGADs). The evaluation includes performance metrics such as the internal gain layer's efficiency in enhancing…

The charge collection properties in different particle sensor materials with respect to the shape of the generated signals, the electric field within the detector, the charge carrier mobility and the carrier lifetime are studied with the…