Related papers: High-order AMR in two-dimensional magnetic monolay…
When a conduction electron couples with a non-coplanar localized magnetic moment, the realspace Berry curvature is exerted to cause the geometrical Hall effect, which is not simply proportional to the magnetization. So far, it has been…
We present a combined experimental and theoretical study of the spin-1/2 compound CuP$_2$O$_6$ that features a network of two-dimensional (2D) antiferromagnetic (AFM) square planes, interconnected via one-dimensional (1D) AFM spin chains.…
When monolayers of two-dimensional (2D) materials are stacked into van der Waals structures, interlayer electronic coupling can introduce entirely new properties, as exemplified by recent discoveries of moir\'e bands that host highly…
We theoretically and numerically show that longitudinal orbital currents in ferromagnets depend on the magnetization direction, which contribute to the anisotropic magnetoresistance (AMR). This orbital contribution to AMR arises from the…
In twisted two-dimensional (2D) magnets, the stacking dependence of the magnetic exchange interaction can lead to regions of ferromagnetic and antiferromagnetic interlayer order, separated by non-collinear, skyrmion-like spin textures.…
We show that anisotropic energy of a 2D antiferromagnet is greatly enhanced via stacking on a magnetic substrate layer, arising from the sublattice-dependent interlayer magnetic interaction that defines an effective anisotropic energy.…
We report magnetotransport study on type-II Weyl semimetal WP$_2$ single crystals. Magnetoresistance (MR) exhibits a nonsaturating $H^{n}$ field dependence (14,300\% at 2 K and 9 T) whereas systematic violation of Kohler's rule was…
We present a study of transport in multiple-band non-interacting Fermi metallic systems based on the Keldysh formalism, taking into account the effects of Berry curvature due to spin-orbit coupling. We apply this formalism to a Rashba 2DEG…
Two-dimensional Molybdenum Disulfide (MoS2) has shown promising prospects for the next generation electronics and optoelectronics devices. The monolayer MoS2 can be patterned into quasi-one-dimensional anisotropic MoS2 nanoribbons (MNRs),…
The Berry curvature dipole is well-known to cause Hall conductivity. This study expands on previous results to demonstrate how two- and three-dimensional materials react under a tilted magnetic field in the linear and nonlinear regimes. We…
Three-dimensional (3D) antiferromagnets with random magnetic anisotropy (RMA) experimentally studied to date do not have random single-ion anisotropies, but rather have competing two-dimensional and three-dimensional exchange interactions…
Recent experimental developments in the iron pnictides have unambiguously demonstrated the existence of in-plane electronic anisotropy in the absence of the long-range magnetic order. Such anisotropy can arise from orbital ordering, which…
We report novel features in the in-plane magnetoresistance (MR) of heavily underdoped YBa_2Cu_3O_{6+x}, which unveil a developed ``charged stripe'' structure in this system. One of the striking features is an anisotropy of the MR with a…
Traditional view of the anomalous Hall effect~(AHE) in ferromagnets is that it arises from the magnetization perpendicular to the measurement plane and that there is a linear dependence on the latter. Underlying such a view is the thinking…
Magnetic moments intercalated into layered transition metal dichalcogenides are an excellent system for investigating the rich physics associated with magnetic ordering in a strongly anisotropic, strong spin-orbit coupling environment. We…
The interplay between magnetism and topological electronic structure offers a large freedom to design strong anomalous Hall effect (AHE) materials. A nodal line from band inversion is a typical band structure to generate strong AHE.…
Motivated by growing interest in atomically-thin van der Waals magnetic materials, we present an {\it ab initio} theoretical study of the dependence of their magnetic properties on the electron/hole density $\rho$ induced via the electrical…
Compared to the ferromagnetic materials that realize the anomalous valley Hall effect by breaking time-reversal symmetry and spin-orbit coupling, the antiferromagnetic materials with the joint spatial inversion and time-reversal (PT)…
Magnetoresistance (MR) is a characteristic that the resistance of a substance changes with the external magnetic field, reflecting various physical origins and microstructures of the substance. A large MR, namely a huge response to a low…
We investigate spin-dependent transport phenomena in epitaxially grown Fe$_3$Si films, focusing on the anisotropic magnetoresistance (AMR), planar Hall effect (PHE), anomalous Hall effect (AHE), and spin Hall effect (SHE). While the sign…