Related papers: Frequency-Resolved Forward Capacitance in GaN-base…
We demonstrate absorber-free passive and hybrid mode-locking at sub-GHz repetition rates using a hybrid integrated extended cavity diode laser around 1550 nm. The laser is based on InP as gain medium and a long Si$_3$N$_4$ feedback circuit,…
We present the design, fabrication, and optical characterization of ultra-compact mid-wave infrared photodetector pixels. Our design relies on a guided mode resonance structure to confine incident mid-infrared light to the 250 nm-thick…
This paper discusses a new channel model and code design for the reader-to-tag channel in near-field passive radio frequency identification (RFID) systems using inductive coupling as a power transfer mechanism. If the receiver…
The increasing penetration of inverter-based renewable generation has significantly reduced system inertia, making modern power grids more vulnerable to rapid frequency deviations following disturbances. While a wide range of flexible…
The complex impedance of a semiconductor superlattice biased into the regime of negative differential conductivity and driven by an additional GHz ac voltage is computed. From a simulation of the nonlinear spatio-temporal dynamics of…
Basic multimode impedance analysis grounded in the availability of nonequilibrium charge carriers and their retarded path towards equilibrium is used to access the inadequacy of equivalent circuits in nonlinear systems with inherent memory.…
Incorporating a variable capacitance diode into a radio-frequency matching circuit allows us to in-situ tune the resonance frequency of an RF quantum point contact, increasing the versatility of the latter as a fast charge sensor of a…
Precision instrumentation systems, such as optical receivers and other current-output measurement systems, often contain a transimpedance amplifier (TIA). The commonly used resistive feedback TIA (RF-TIA) has a drawback in its practical…
Interference Gating or iGate is a unique method for ultrafast time-resolved electron holography in a transmission electron microscope enabling a spatiotemporal resolution in the nm and ns regime with a minimal technological effort. Here,…
III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which have enabled significant energy savings in the last decade. Despite the wide application of GaN LEDs, transport…
Lasers with well controlled relative frequencies are indispensable for many applications in science and technology. We present a frequency offset locking method for lasers based on beat frequency discrimination utilizing hybrid electronic…
We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that…
High frequency transformers are an integral part of power electronics devices and their parasitic parameters influence the performance and efficiency of the overall system. In this paper, transformer leakage inductances and parasitic…
Integrated Sensing and Communication (ISAC) systems face stringent hardware constraints, particularly regarding the high Peak-to-Average Power Ratio (PAPR) of standard OFDM, which necessitates power amplifier (PA) back-off and reduces…
Current-mode control is one of the most popular controller strategies for power converters. With the advent of wide bandgap devices including GaN and SiC, higher switching frequencies have become more viable at higher power because of lower…
With the increasing penetration of renewable energy, frequency response and its security are of significant concerns for reliable power system operations. Frequency-constrained unit commitment (FCUC) is proposed to address this challenge.…
We present a compact InGaN fiber Bragg grating (FBG) semiconductor laser diode operating below 400 nm in the single-mode emission regime. This compact coherent laser source exhibits an intrinsic linewidth of 14 kHz in the near-UV range and…
This work addresses a strategy to mitigate jamming attack on low-latency communication by a Full-Duplex (FD) adversary in fast-fading channel conditions. The threat model is such that the FD adversary can jam a frequency band and measure…
An InAlN/GaN HEMT device was studied using extensive temperature dependent DC IV measurements and CV measurements. Barrier traps in the InAlN layer were characterized using transient analysis. Forward gate current was modelled using…
Automatic test pattern generation (ATPG) is a crucial process in integrated circuit (IC) design and testing, responsible for efficiently generating test patterns. As semiconductor technology progresses, traditional ATPG struggles with long…