Related papers: Electronic Trap Detection with Carrier-Resolved Ph…
The collection of charge carriers generated in p+n strip sensors close to the Si-SiO2 interface before and after 1 MGy of X-ray irradiation has been investigated using the transient current technique with sub-nanosecond focused light pulses…
Electrical charging of metal surfaces due to photoelectric generation of carriers is of concern in trapped ion quantum computation systems, due to the high sensitivity of the ions' motional quantum states to deformation of the trapping…
Accurate modeling of charge transport and both thermal and luminescent radiation is crucial to the understanding and design of radiative thermal energy converters. Charge carrier dynamics in semiconductors are well-described by the…
Efficient and controlled charge transport in networks of semiconducting single-walled carbon nanotubes is the basis for their application in electronic devices, especially in field-effect transistors and thermoelectrics. The recent advances…
A film of liquid helium on the surface of material traps for ultracold neutrons protects the neutrons from being absorbed by the trap walls. By using surface roughness and an electrostatic field, it is possible to maintain a helium film of…
A single atom strongly coupled to a cavity mode is stored by three-dimensional confinement in blue-detuned cavity modes of different longitudinal and transverse order. The vanishing light intensity at the trap center reduces the light shift…
An experimental analysis for two parallel conducting layers determines the full resistivity tensor of the parallel layer, at magnetic fields where the other layer is in the quantum Hall regime. In heterostructures which exhibit parallel…
Fast-responding trap states introduced by NO-annealing are suspected to limit the channel mobility of 4H-SiC MOSFETs, yet their microscopic characterization remains challenging because conventional electrical methods are spatially averaged…
We report on tuning the carrier capture events at a single dangling bond (DB) midgap state by varying the substrate temperature, doping type, and doping concentration. All-electronic time-resolved scanning tunneling microscopy (TR-STM) is…
The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can strongly influence device behavior.…
NaSbS2 is a semiconductor that was recently shown to have remarkable efficacy as a solar absorber indicating efficient charge collection even in defected material. We report first principles calculations of properties that show (1) an…
The photocurrent density-voltage (J(V)) curve is the fundamental characteristic to assess opto-electronic devices, in particular solar cells. However, it only yields information on the performance integrated over the entire active device…
The heavy fermion systems present a unique platform in which strong electronic correlations give rise to a host of novel, and often competing, electronic and magnetic ground states. Amongst a number of potential experimental tools at our…
Recently we have demonstrated scalable, non-destructive, and high-fidelity detection of the internal state of $^{87}$Rb neutral atoms in optical dipole traps using state-dependent fluorescence imaging [M. Martinez-Dorantes et al., PRL,…
Electrostatic effects can strongly constrain charge transport in thinned high-purity germanium (HPGe), with direct implications for radiation detectors and Ge-based electronic and quantum devices. We report a systematic experimental…
Strongly correlated electron liquids which occur in quantizing magnetic fields reveal a cornucopia of fascinating quantum phenomena such as fractionally charged quasiparticles, anyonic statistics, topological order, and many others. Probing…
Photocurrent acts as one of measurable responses of material to light, which has proved itself to be crucial for sensing and energy harvesting. Topological semimetals with gapless energy dispersion and abundant topological surface and bulk…
Trapping of hot electron behavior by trap centers located in buffer layer of a wurtzite phase GaN MESFET has been simulated using an ensemble Monte Carlo simulation. The results of the simulation show that the trap centers are responsible…
Photoluminescence (PL) is a ubiquitous proxy for material quality in optoelectronic devices, widely used for high-throughput materials discovery. However, we demonstrate that in the presence of charge-selective contacts, PL loses its…
Accurate determination of carrier densities in ferromagnetic semiconductors by Hall measurements is hindered by the anomalous Hall effect, and thus alternative methods are being sought. Here, we propose that cyclotron resonance (CR) is an…