Related papers: Electronic Trap Detection with Carrier-Resolved Ph…
Typically, amorphous organic materials contain high density of traps. Traps hinder charge transport and, hence, affect various working parameters of organic electronic devices. In this paper we suggest a simple but reliable method for the…
Understanding carrier trapping in solids has proven key to semiconductor technologies but observations thus far have relied on ensembles of point defects, where the impact of neighboring traps or carrier screening is often important. Here,…
We describe a theory on photo-thermoelectric properties of a semiconductor, which include photo-conductivity, photo-Seebeck coefficient, and photo-Hall effect. We demonstrate that these properties provide a powerful tool for the study of…
We report spatially resolved optical probing of charge traps in organic field-effect transistors using focussed laser illumination. By scanning a 635 nm laser across the transistor channel and simultaneously acquiring transfer…
We have observed the Hall effect in the field-induced accumulation layer on the surface of small-molecule organic semiconductor. The Hall mobility mu_H increases with decreasing temperature in both the intrinsic (high-temperature) and…
Due to the large surface-to-volume ratio, surface trap states play a dominant role in the optoelectronic properties of nanoscale devices(1-6). Understanding the surface trap states allows us to properly engineer the device surfaces for…
Majority and minority carrier properties such as type, density and mobility represent fundamental yet difficult to access parameters governing semiconductor device performance, most notably solar cells. Obtaining this information…
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $\mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot…
We present a thorough analysis of the electronic detection of charged particles, confined in a Penning trap, via image charges induced in the trap electrodes. Trapping of charged particles in an electrode structure leads to frequency…
Defect induced trap states are essential in determining the performance of semiconductor photodetectors. The de-trap time of carriers from a deep trap could be prolonged by several orders of magnitude as compared to shallow trap, resulting…
The effects of nitridation on the density of traps at SiO$_2$/SiC interfaces near the conduction band edge were qualitatively examined by a simple, newly developed characterization method that utilizes Hall effect measurements and split…
The decoupling of epitaxial factors influencing on the dynamic instabilities of AlGaN/GaN metal-insulator semiconductor high electron mobility transistors is investigated. Three different sets of samples have been analyzed by means of…
The efficiency of solution-processed colloidal quantum dot (QD) based solar cells is limited by poor charge transport in the active layer of the device, which originates from multiple trapping sites provided by QD surface defects. We apply…
We investigated the electrical properties of a unipolar organic device with traps that were intentionally inserted into a particular position in the device. Depending on their inserted position, the traps significantly alter the charge…
Organometallic halide perovskites (OMHPs) have undergone remarkable developments as highly efficient optoelectronic materials for a variety of applications. Several studies indicated the critical role of defects on the performance of OMHP…
Nanoscale devices are being extensively studied for their tunable electronic and optical properties, but the influence of impurities and defects is amplified at these length scales and can lead to poorly understood variations in…
As silicon-based devices continue to shrink to the nanoscale, traps at the Si-SiO$_2$ interface pose increasing challenges to device performance. These traps reduce channel carrier mobility and shift threshold voltages in integrated…
Ion trap systems built upon microfabricated chips have emerged as a promising platform for quantum computing to achieve reproducible and scalable structures. However, photo-induced charging of materials in such chips can generate undesired…
Transport measurements made on films of thallium-oxide (n-type semiconductor) are presented and discussed. The focus in this work is on the strongly-localized regime where charge transport is by variable-range-hopping. It is demonstrated…
One of the critical challenges in enhancing the performance of perovskite solar cells is reducing the density of trap states in the light-absorbing perovskite layer. These trap states lead to increased charge carrier recombination, thus…