Related papers: Correlated Structural and Optical Characterization…
This report summarizes progress made in understanding properties such as zero-phonon-line energies, emission and absorption polarizations, electron-phonon couplings, strain tuning and hyperfine coupling of single photon emitters in…
Negatively charged boron vacancy ($\mathrm{V_B^-}$) in hexagonal boron nitride (hBN) is the most extensively studied room-temperature quantum spin system in two-dimensional (2D) materials. Nevertheless, the current effective readout of…
Single photon emitters (SPEs) are a key component for their use as pure photon source in quantum technologies. In this study, we investigate the generation of SPEs from drop-casted hexagonal boron nitride (hBN) nanoflakes, examining the…
Hexagonal boron nitride (hBN) is an excellent host for solid-state single phonon emitters. Experimental observed emission ranges from infrared to ultraviolet. The emission centers are generally attributed to either intrinsic or extrinsic…
Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam…
The concept of optically addressable spin states of deep level defects in wide band gap materials is successfully applied for the development of quantum technologies. Recently discovered negatively charged boron vacancy defects (VB) in…
B-centres in hexagonal boron nitride (hBN) are gaining significant research interest for quantum photonics applications due to precise emitter positioning and highly reproducible emission wavelengths. Here, we leverage the layered nature of…
Hexagonal boron nitride (h-BN) is a promising platform for quantum information processing due to its potential to host optically active defects with attractive optical and spin properties. Recent studies suggest that carbon trimers might be…
Controlling and manipulating individual quantum systems in solids underpins the growing interest in development of scalable quantum technologies. Recently, hexagonal boron nitride has garnered significant attention in quantum photonic…
Hexagonal boron nitride (hBN), having an in-plane hexagonal structure in the sp2 arrangement of atoms, proclaims structural similarity with graphene with only a small lattice mismatch. Despite having nearly identical atomic arrangements and…
Efficient nanophotonic devices are essential for applications in quantum networking, optical information processing, sensing, and nonlinear optics. Extensive research efforts have focused on integrating two-dimensional (2D) materials into…
The controlled creation and manipulation of defects in 2D materials has become increasingly popular as a means to design and tune new material functionalities. However, defect characterization by direct atomic imaging is often severely…
Spin defects in two-dimensional materials hold significant potential for quantum information technologies and sensing applications. The negatively charged boron vacancy (VB-) in hexagonal boron nitride (hBN) has attracted considerable…
There is a large discrepancy between the experimental observations and the theoretical predictions in the morphology of hexagonal boron nitride (h-BN) nanosheets. Theoretically-predicted hexagons terminated by armchair edges are not…
We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V$_\text{B}^-$) centers hosted in isotopically-engineered hexagonal boron nitride (hBN) crystals. We first show that isotopic purification of hBN with $^{15}$N yields…
The generation and manipulation of non-classical states of light is central to quantum technologies. Color centers in insulators have been extensively studied for single-photon generation, but organic molecules immobilized on substrates…
Single-photon emitters (SPE) in hexagonal boron nitride (h-BN) are promising for applications ranging from single-photon sources to quantum sensors. Previous studies exclusively focused on the generation and characterization of SPEs in…
Color centers hosted in hexagonal boron nitride have emerged as a highly promising platform for single-photon emission and spin-photon technologies relevant to quantum communication and quantum networking. As a wide-bandgap van der Waals…
Paramagnetic substitutional carbon (C$_\text{B}$, C$_\text{N}$) defects in hexagonal boron nitride (hBN) are discussed as candidates for quantum bits. Their identification and suitability are approached by means of photoluminescence (PL),…
Hexagonal boron nitride is an ideal dielectric to form two-dimensional heterostructures due to the fact that it can be exfoliated to be just few atoms thick and its a very low density of defects. By placing graphene nanoribbons on high…