Related papers: A silicon-based ion trap chip protected from semic…
Microfabricated ion trap chips are at the core of some of the most advanced quantum computers. How a large number of ions is arranged and controlled on an ion trap chip depends on the chosen trap architecture. One such architecture is the…
Solution-processed amorphous silicon is a promising material for semiconductor devices. Unfortunately, its manufacturing leaves a high density of defects in the layer, which can be reduced by a treatment with hydrogen radicals. Here, we…
Integrated photonic circuits are one of the most promising platforms for large-scale photonic quantum information systems due to their small physical size and stable interferometers with near-perfect lateral-mode overlaps. Since many…
Recent advances of quantum technologies rely on precise control and integration of quantum objects, and technological breakthrough is anticipated for further scaling up to realize practical applications. Trapped-ion quantum technology is a…
The implementation of optomechanical devices in silicon-on-insulator (SOI), the canonical silicon photonics technology is seriously hampered by the strong phonon leakage into the silica under-cladding. This limitation has been partially…
Silicon carbide (SiC) is the leading wide-bandgap semiconductor material, providing mature doping and device fabrication. Additionally, SiC hosts a multitude of optically active point defects (color centers) and is relevant for many…
Recent progress in integrated-optics technology has made photonics a promising platform for quantum networks and quantum computation protocols. Integrated optical circuits are characterized by small device footprints and unrivalled…
Trapped-ion technology is a leading approach for scalable quantum computing. A key element of ion trapping is reliable loading of atomic sources into the trap. While thermal atomic ovens have traditionally been used for this purpose, laser…
We report the design, fabrication, and characterization of a microfabricated surface-electrode ion trap that supports controlled transport through the two-dimensional intersection of linear trapping zones arranged in a ninety-degree cross.…
For conventional ion traps, the trapping potential is close to independent of the electronic state, providing confinement for ions dependent primarily on their charge-to-mass ratio $Q/m$. In contrast, storing ions within an optical dipole…
We report on the characterization of heating rates and photo-induced electric charging on a microfabricated surface ion trap with integrated waveguides. Microfabricated surface ion traps have received considerable attention as a quantum…
Silicon is an extremely attractive material platform for integrated optics at telecommunications wavelengths, particularly for integration with CMOS circuits. Developing detectors and electrically pumped lasers at telecom wavelengths are…
Two-dimensional (2D) transition metal dichalcogenides are pivotal for next-generation photonic devices due to their exceptional optical properties and strong light-matter interactions. However, their atomic thinness renders them susceptible…
Laser cooled atoms are central to modern precision measurements. They are also increasingly important as an enabling technology for experimental cavity quantum electrodynamics, quantum information processing and matter wave interferometry.…
We demonstrate a method for loading surface electrode ion traps by electron impact ionization. The method relies on the property of surface electrode geometries that the trap depth can be increased at the cost of more micromotion. By…
Using a combination of quantum and classical computational approaches, we model the electronic structure in amorphous silicon in order gain understanding of the microscopic atomic configurations responsible for light induced degradation of…
One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap…
Isolating neutral and charged particles from the environment is essential in precision experiments. For decades, this has been achieved by trapping ions with radio-frequency (rf) fields and neutral particles with optical fields. Recently,…
Surface damage caused by ionizing radiation in SiO$_2$ passivated silicon particle detectors consists mainly of the accumulation of a positively charged layer along with trapped-oxide-charge and interface traps inside the oxide and close to…
Trapped ions driven by electromagnetic radiation constitute one of the most developed quantum technologies to date. The scenarios range from proof-of-principle experiments to on-chip integration for quantum information units. In most cases,…