Related papers: A 2x2 quantum dot array in silicon with fully tune…

Scaling up quantum dots to two-dimensional (2D) arrays is a crucial step for advancing semiconductor quantum computation. However, maintaining excellent tunability of quantum dot parameters, including both nearest-neighbor and…

Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest…

Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing.…

Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required,…

Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable platform for quantum information processing and quantum simulations. For the operation of quantum dot arrays, appropriate voltages need to be…

Silicon metal-oxide-semiconductor (MOS) spin qubits have become a promising platform for quantum information processing, with recent demonstrations of high-fidelity single and two-qubit gates. To move beyond a few qubits, however, more…

Recent demonstrations using electron spins stored in quantum dots array as qubits are promising for developing a scalable quantum computing platform. An ongoing effort is therefore aiming at the precise control of the quantum dots…

Silicon spin qubits have achieved high-fidelity one- and two-qubit gates, above error correction thresholds, promising an industrial route to fault-tolerant quantum computation. A significant next step for the development of scalable…

In many physical approaches to quantum computation, error-correction schemes assume the ability to form two-dimensional qubit arrays with nearest-neighbor couplings and parallel operations at multiple qubit sites. While semiconductor spin…

We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate…

Achieving uniform and scalable control of semiconductor spin qubits remains a key challenge for large scale quantum computing. In this work, we investigate how gate oxide thickness influences uniformity in dense two dimensional silicon…

Quantum dots can confine single electrons or holes to define spin qubits that can be operated with high fidelity. Experimental work has progressed from linear to two-dimensional arrays of quantum dots, enabling qubit interactions that are…

The efficient control of a large number of qubits is one of most challenging aspects for practical quantum computing. Current approaches in solid-state quantum technology are based on brute-force methods, where each and every qubit requires…

Significant advances have been made towards fault-tolerant operation of silicon spin qubits, with single qubit fidelities exceeding 99.9%, several demonstrations of two-qubit gates based on exchange coupling, and the achievement of coherent…

The promise of quantum computation is contingent upon physical qubits with both low gate error rate and broad scalability. Silicon-based spins are a leading qubit platform, but demonstrations to date have not utilized fabrication processes…

The interaction between electrons in arrays of electrostatically defined quantum dots is naturally described by a Fermi-Hubbard Hamiltonian. Moreover, the high degree of tunability of these systems make them a powerful platform to simulate…

Quantum gates between spin qubits can be implemented leveraging the natural Heisenberg exchange interaction between two electrons in contact with each other. This interaction is controllable by electrically tailoring the overlap between…

We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…

We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon…

Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties…