Related papers: Variability in Resistive Memories
The demand for high-density data storage with ultrafast accessibility motivates the search for new memory implementations. Ideally such storage devices should be robust to input error and to unreliability of individual elements; furthermore…
The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and cognitive algorithms. Traditional digital computer systems have separate logic and memory units, resulting in a huge delay and energy cost for…
Resistance-change random access memory (RRAM) devices are nanoscale metal-insulator-metal structures that can store information in their resistance states, namely the high resistance (HRS) and low resistance (LRS) states. They are a…
Stochastic behaviors of resistive random access memory (RRAM) play an important role in the design of cross-point memory arrays. A Monte Carlo compact model of oxide RRAM is developed and calibrated with experiments on various device stack…
The development of neuromorphic systems based on memristive elements - resistors with memory - requires a fundamental understanding of their collective dynamics when organized in networks. Here, we study an experimentally inspired model of…
Resistive-switching -- the current-/voltage-induced electrical resistance change -- is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching…
Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory…
The operation of a novel nonvolatile memory device based on a conductive ferroelectric/non-ferroelectric thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady state solution of Poisson's…
Phase-change memory (PCM) is a scalable and low latency non-volatile memory (NVM) technology that has been proposed to serve as storage class memory (SCM), providing low access latency similar to DRAM and often approaching or exceeding the…
Compute-in-memory (CiM) architectures promise significant improvements in energy efficiency and throughput for deep neural network acceleration by alleviating the von Neumann bottleneck. However, their reliance on emerging non-volatile…
A programmable linear resistor with a compact footprint would have profound implications for microelectronics, enabling efficient in-sensor analog signal processing and in-memory computing. Non-volatile memory offers a potential solution…
Two-dimensional (2D) materials are popular candidates for emerging nanoscale devices, including memristors. Resistive switching (RS) in such 2D material memristors has been attributed to the formation and dissolution of conductive filaments…
In-memory computing is an emerging non-von Neumann computing paradigm where certain computational tasks are performed in memory by exploiting the physical attributes of the memory devices. Memristive devices such as phase-change memory…
Under certain conditions, applying a sequence of voltage pulses of alternating polarities across a resistive switching memory device induces a finite number of fixed-point attractors in its time-averaged dynamics, known as dynamical…
Ideally, a variability model is a correct and complete representation of product line features and constraints among them. Together with a mapping between features and code, this ensures that only valid products can be configured and…
The storage and retrieval of photonic quantum states, quantum memory, is a key resource for a wide range of quantum applications. Here we investigate the sensitivity of $\Lambda$-type quantum memory to experimental fluctuations and drift.…
Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional…
Persistent Memory (PM) is non-volatile byte-addressable memory that offers read and write latencies in the order of magnitude smaller than flash storage, such as SSDs. This survey discusses how file systems address the most prominent…
Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity…
Emerging non-volatile memories have been proposed for a wide range of applications from easing the von-Neumann bottleneck to neuromorphic applications. Specifically, scalable RRAMs based on Pr$_{1-x}$Ca$_x$MnO$_3$ (PCMO) exhibit analog…