Related papers: Variability in Resistive Memories
Flexibility at hardware level is the main driving force behind adaptive systems whose aim is to realise microarhitecture deconfiguration 'online'. This feature allows the software/hardware stack to tolerate drastic changes of the workload…
Neuromorphic devices, with their distinct advantages in energy efficiency and parallel processing, are pivotal in advancing artificial intelligence applications. Among these devices, memristive transistors have attracted significant…
Memristors are nonlinear two-terminal circuit elements whose resistance at a given time depends on past electrical stimuli. Recently, networks of memristors have received attention in neuromorphic computing since they can be used as a tool…
We put forward a new proposal of designing charge-based logic devices considering a cyclic molecule that can be programmed and re-programmed for different functional logical operations and suitably engineered for data storage as well. The…
Bipolar resistive switching using organic molecule is very promising for memory application owing to their advantages like simple device structure, low manufacturing cost, their stability and flexibility etc. Herein we report…
The key feature of a memristor is that the resistance is a function of its previous resistance, thereby the behaviour of the device is influenced by changing the way in which potential is applied across it. Ultimately, information can be…
The morphological evolution of the conducting filament (CF) predominantly controls the electric response of the resistive random access memory (ReRAM) devices. However, the parameters -- in terms of the material and the processing -- which…
The necessity of having an electronic device working in relevant biological time scales with a small footprint boosted the research of a new class of emerging memories. Ag-based volatile resistive switching memories (RRAMs) feature a…
Emerging memristor-based array architectures have been effectively employed in non-volatile memories and neuromorphic computing systems due to their density, scalability and capability of storing information. Nonetheless, to demonstrate a…
Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…
Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…
Different real-world cognitive tasks evolve on different relevant timescales. Processing these tasks requires memory mechanisms able to match their specific time constants. In particular, the working memory utilizes mechanisms that span…
Our ISCA 2013 paper provides a fundamental empirical understanding of two major factors that make it very difficult to determine the minimum data retention time of a DRAM cell, based on the first comprehensive experimental characterization…
Once referred to as the missing circuit component, memristor has come long way across to be recognized and taken as important to future circuit designs. The memristor due to its ability to memorize the state, switch between different…
The possibility of in-memory computing with volatile memristive devices, namely, memristors requiring a power source to sustain their memory, is demonstrated. We have adopted a hysteretic graphene-based field emission structure as a…
The memristors are expected to be fundamental devices for neuromorphic systems and switching applications. For example, the device made of a sandwiched layer of poly(N-vinylcarbazole) and reduced graphene composite between asymmetric…
Metallic nanogranular films display a complex dynamical response to a constant bias, showing up as atypical resistive switching mechanism which could be used to create electrical components for neuromorphic applications. To model such a…
A resistive memory network that has no crossover wiring is proposed to overcome the hardware limitations to size and functional complexity that is associated with conventional analogue neural networks. The proposed memory network is based…
Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a multitude of resistive states and ultimately function as memory…
A large number of simulation models have been proposed over the years to mimic the electrical behaviour of memristive devices. The models are based either on sophisticated mathematical formulations that do not account for physical and…