Related papers: Vertically stacked amorphous selenium based VUV ph…
Detection of the vacuum ultraviolet (VUV) scintillation light produced by liquid noble elements is a central challenge in order to fully exploit the available timing, topological, and calorimetric information in detectors leveraging these…
The performance of amorphous selenium (a-Se) as a cryogenic photodetector material is evaluated through a series of experiments using laterally structured devices operated in a custom optical test stand. These studies investigate the…
We performed a measurement of the ionization response of 200 $\mu$m-thick amorphous selenium (aSe) layers under drift electric fields of up to 50 V/$\mu$m. The aSe target was exposed to ionizing radiation from a $^{57}$Co radioactive source…
Imaging sensors made from an ionization target layer of amorphous selenium (aSe) coupled to a silicon complementary metal-oxide-semiconductor (CMOS) active pixel array for charge readout are a promising technology for neutrino physics. The…
We present a vacuum ultraviolet (VUV) band-pass photon detector for inverse photoemission spectroscopy. A SrF2 window is used due to its high-energy cutoff of the optical transmission being 9.7eV, and acetone is selected as filling gas with…
Cryogenic photon sensing for high-energy physics motivates photosensor technologies that combine large-area scalability with internal gain and stable operation at low temperature. Amorphous selenium is a promising photoconductor, yet its…
Applying direct growth and deposition of optical surfaces holds great promise for the advancement of future nanophotonic technologies. Here, we report on a chemical vapor deposition (CVD) technique for depositing amorphous selenium (a-Se)…
We report on the integration of large area CVD grown single- and bilayer graphene transparent conductive electrodes (TCEs) on amorphous silicon multispectral photodetectors. The broadband transmission of graphene results in 440% enhancement…
There are several applications and fundamental research areas which require the detection of VUV light at cryogenic temperatures. For these applications we have developed and successfully tested special designs of gaseous detectors with…
Gallium selenide (GaSe) is a novel two-dimensional material, which belongs to the layered III-VIA semiconductors family and attracted interest recently as it displays single-photon emitters at room temperature and strong optical…
Graphene and related two-dimensional materials are promising candidates for atomically thin, flexible, and transparent optoelectronics. In particular, the strong light-matter interaction in graphene has allowed for the development of…
Accurate knowledge of material reflectance in the vacuum ultraviolet (VUV) range is crucial for optimizing photon detection in noble gas detectors such as DUNE. Despite its importance, reflectance values for detector materials in the VUV…
We have developed commercial prototypes of sealed gaseous detectors combined with CsI photocathodes and/or filled with photosensitive vapors. The rirst results of application of these devices for the detection of flames in daylight…
We show that epitaxial graphene on silicon carbide (epigraphene) grown at high temperatures (T > 1850 {\deg}C) readily acts as material for implementing solar-blind ultraviolet (UV) detectors with outstanding performance. We present…
Detectors with an electroluminesence readout show an excellence performance in respect of energy resolution making them interesting for various applications as X-ray detection, double beta and dark matter experiments, Compton and gamma…
Liquid xenon (LXe) based detectors for rare event searches in particle and astroparticle physics are optimized for high xenon scintillation light collection and low background rate from detector materials. Polytetrafluoroethylene (PTFE,…
We have demonstrated experimentally that recently developed gaseous detectors combined with solid or gaseous photo-cathodes have exceptionally low noise and high quantum efficiency for UV photons while being solar blind. For this reason…
In this report, we demonstrate dual band vertical heterojunction photodetector realized by integrating {\alpha}-In2Se3 with p-type GaN. Flakes of ~ 110 nm thickness were exfoliated on MOCVD grown p-GaN on silicon substrate. Devices showed…
The HASPIDE (Hydrogenated Amorphous Silicon PIxels DEtectors) project aims at the development of thin hydrogenated amorphous silicon (a-Si:H) detectors on flexible substrates (mostly Polyimide) for beam monitoring, neutron detection and…
Imaging devices made from an ionization target layer of amorphous selenium (aSe) coupled to a silicon complementary metal-oxide-semiconductor (CMOS) active pixel array for charge readout are a promising technology for neutrino physics. The…