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The efficient detection of the magnetism in 2D antiferromagnetic (AFM) insulators is crucial for the advancement of 2D AFM spintronics and remains a challenging problem. In this letter, we introduce the magnon nonlinear Hall current, a…
We recently proposed quantum simulators of "twistronic-like" physics based on ultracold atoms and syntheticdimensions [Phys. Rev. Lett. 125, 030504 (2020)]. Conceptually, the scheme is based on the idea that aphysical monolayer optical…
The combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is of great significance for potential applications in valleytronics. Here, we propose a design principle for achieving AVHE in A-type hexagonal…
A set of stacked two-dimensional electron systems in a perpendicular magnetic field exhibits a three-dimensional version of the quantum Hall effect if interlayer tunneling is not too strong. When such a sample is in a quantum Hall plateau,…
For the innovation of spintronic technologies, Dirac materials, in which the low-energy excitation is described as relativistic Dirac fermions, are one of the most promising systems, because of the fascinating magnetotransport associated…
The second-order nonlinear Hall effect illuminates a frequency-doubling transverse current emerging in quantum materials with broken inversion symmetry even when time-reversal symmetry is preserved. This nonlinear response originates from…
The interplay between nontrivial band topology and layered antiferromagnetism in MnBi2Te4 has opened up a new avenue for exploring topological phases of matter. Representative examples include the quantum anomalous Hall effect and axion…
The electromagnetic characteristics of double-layer quantum Hall systems are studied, with projection to the lowest Landau level taken into account and intra-Landau-level collective excitations treated in the single-mode approximation. It…
With spin-layer locking, the manipulation of spin degree of freedom via perpendicular electric field can be realized in a typical antiferromagnetically coupled bilayer. In analogy to the electric control of the anomalous layer Hall effect…
Photovoltaic Hall effect, i.e., generation of a photocurrent perpendicular to the bias electric field, is an interesting platform of Berry curvature engineering by external fields. Floquet engineering aims at generation of light-induced…
The layer Hall effect is an intriguing phenomenon observed in magnetic topological layered materials, where the Hall response arises from the opposite deflection of electrons on top and bottom layers. To realize layer Hall effect,…
The planar Hall effect in 3D systems is an effective probe for their Berry curvature, topology, and electronic properties. However, the Berry curvature-induced conventional planar Hall effect is forbidden in 2D systems as the out-of-plane…
We investigate electronic transport in dual-gated twisted bilayer graphene. Despite the sub-nanometer proximity between the layers, we identify independent contributions to the magnetoresistance from the graphene Landau level spectrum of…
The electronic topology is generally related to the Berry curvature, which can induce the anomalous Hall effect in time-reversal symmetry breaking systems. Intrinsic monolayer transition metal dichalcogenides possesses two nonequivalent K…
Under broken time reversal symmetry such as in the presence of external magnetic field or internal magnetization, a transverse voltage can be established in materials perpendicular to both longitudinal current and applied magnetic field,…
The edge states of the quantum Hall and fractional quantum Hall effect of a two-dimensional electron gas provide key access to the excitations of the bulk. Here we demonstrate controlled transmission of edge states in bilayer graphene.…
We reveal the gate-tunable Berry curvature dipole polarizability in Dirac semimetal Cd3As2 nanoplates through measurements of the third-order nonlinear Hall effect. Under an applied electric field, the Berry curvature exhibits an asymmetric…
We study the ac Hall response induced by passage of dc transport current in two- and three-dimensional metals with gyrotropic point groups -- the gyrotropic Hall effect -- and consider the phenomenon of current-induced optical activity in…
The valley degree of freedom of electrons in solids has been proposed as a new type of information carriers beyond the electronic charge and spin. Recent experimental demonstrations of the optical orientation of the valley polarization and…
Recent advances in manipulation of orbital angular momentum (OAM) within the paradigm of orbitronics present a promising avenue for the design of future electronic devices. In this context, the recently observed orbital Hall effect (OHE)…