Related papers: Straintronic magnetic tunnel junctions for analog …
Spin-orbitronics, based on both spin and orbital angular momentum, presents a promising pathway for energy-efficient memory and logic devices. Recent studies have demonstrated the emergence of orbital currents in light transition metals…
Probabilistic computers offer promising solutions for computationally hard problems in domains such as combinatorial optimization and machine learning. A key building block in these systems is the probabilistic bit (p-bit), which relies on…
Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field-free switching schema in SOT devices is of great interest…
We study whether a direct measurement of the absolute temperature of a Magnetic Tunnel Junction (MTJ) can be performed using the high frequency electrical noise that it delivers under a finite voltage bias. Our method includes quasi-static…
Voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is a writing technique for voltage-controlled magnetoresistive random access memory (VCMRAM), which is expected to be an ultimate non-volatile memory with ultra-low power…
We report time-resolved measurements of magnetization switching by spin-orbit torques in the absence of an external magnetic field in perpendicularly magnetized magnetic tunnel junctions (MTJ). Field-free switching is enabled by the dipolar…
Smart material implication (SIMPLY) logic has been recently proposed for the design of energy-efficient Logic-in-Memory (LIM) architectures based on non-volatile resistive memory devices. The SIMPLY logic is enabled by adding a comparator…
Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < $t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. The application of…
Altermagnets exhibit nonrelativistic spin splitting without net magnetization, establishing a new platform for next-generation spintronic devices. Although altermagnetic tunnel junctions (AMTJs) represent the most promising realizations,…
Two channels of the sd exchange interaction are considered in magnetic junctions. The first channel describes the interaction of transversal spins with the lattice magnetization. The second one describes the interaction of longitudinal…
Replacing the ferromagnet with ferrimagnet (FiM) in the magnetic tunnel junction (MTJ) allows faster magnetization switching in picoseconds. The operation of a memory cell that consists of the MTJ and a transistor requires reversable…
Perpendicular magnetic tunnel junction (pMTJ)-based true-random number generators (RNG) can consume orders of magnitude less energy per bit than CMOS pseudo-RNG. Here, we numerically investigate with a macrospin Landau-Lifshitz-Gilbert…
We investigate fast-pulse switching of in-plane-magnetized magnetic tunnel junctions (MTJs) within 3-terminal devices in which spin-transfer torque is applied to the MTJ by the giant spin Hall effect. We measure reliable switching, with…
We present the first experimental demonstration of a neuromorphic network with magnetic tunnel junction (MTJ) synapses, which performs image recognition via vector-matrix multiplication. We also simulate a large MTJ network performing MNIST…
We demonstrate single shot al optical switching (AOS) in rare earth free CoFeB/MgO magnetic tunnel junctions (MTJs), a material system widely adopted in spin transfer torque magnetic random access memory (STT MRAM). By tuning the capping…
The XOR Boolean logic gate is widely used in many applications such as encryption (XOR ciphers), binary addition (half- and full-adders), error detection (parity bits), etc. but is challenging to construct because of its demanding…
We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a…
Magnetic tunnel junctions (MTJs) with bcc(001)-type structures such as Fe(001)/MgO(001)/Fe(001), have been widely used as the core of various spintronic devices such as magnetoresistive memories; however, the limited material selection of…
Magnetic tunnel junctions (MTJ) have been successfully applied in various sensing application and digital information storage technologies. Currently, a number of new potential applications of MTJs are being actively studied, including…
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the…