Related papers: Tunable Terahertz Detection and Generation using F…
Intense terahertz (THz) electromagnetic fields have been utilized to reveal a variety of extremely nonlinear optical effects in many materials through nonperturbative driving of elementary and collective excitations. However, such nonlinear…
Strong-field mid-infrared pump--terahertz (THz) probe spectroscopy has been proven as a powerful tool for light control of different orders in strongly correlated materials. We report the construction of an ultrafast broadband infrared…
We study theoretically the dynamical rectification of a terahertz AC electric field, ie. the DC current and voltage response to the incident radiation, in strongly coupled semiconductor superlattices. We address the problem of stability…
We show that the sensitivity of antenna-coupled field-effect transistors (FETs) to terahertz (THz) radiation improves continuously with decreasing temperature. The noise-equivalent power (NEP) of 540 GHz patch-antenna-coupled FETs decreases…
Plasmonic detectors have the potential to provide a method of rapid spectroscopy without the need of moving mirrors or gratings. Previous measurements have demonstrated frequency tunable detection based on plasmonic excitations, however…
We propose and analyze the terahertz (THz) detectors based on a gated graphene p-i-n (GPIN) field-effect transistor (FET) structure. The reverse-biased i-region between the gates plays the role of the electrons and holes injectors…
We designed and fabricated an epitaxial-graphene-channel field-effect transistor (EG-FET) featured by the asymmetric dual-grating-gate (ADGG) structure working for a current-driven terahertz detector, and experimentally demonstrated a 10-ps…
Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm^2 was studied for Si metal-oxide-semiconductor field-effect…
The terahertz (THz) frequency range (0.1-10 THz) fills the gap between the microwave and optical parts of the electromagnetic spectrum. Recent progress in the generation and detection of the THz radiation has made it a powerful tool for…
In this work, we report our study on the THz emission in Fe/Pt magnetic heterostructures. We have carried out a comprehensive investigation of THz emission from Fe/Pt magnetic heterostructures, employing time-domain THz spectroscopy. We…
The device applications of plasmonic systems such as graphene and two dimensional electron gases (2DEGs) in III-V heterostructures include terahertz detectors, mixers, oscillators and modulators. These two dimensional (2D) plasmonic systems…
Achieving efficient terahertz (THz) generation using compact turn-key sources operating at room temperature and modest power levels represents one of the critical challeges that must be overcome to realize truly practical applications based…
The sensitivity of direct terahertz detectors based on self-mixing of terahertz electromagnetic wave in field-effect transistors is being improved with noise-equivalent power close to that of Schottky-barrier-diode detectors. Here we report…
We report on a giant enhancement in the thermal responsivity of the doubly-clamped GaAs microelectromechanical (MEMS) beam resonators by using the internal mode coupling effect. This is achieved by coupling the fundamental bending mode with…
A concept of an electrically tunable resonance detector of THz-frequency signals based on antiferromagnetic/heavy metal (AFM/HM) hetero-structure is proposed. The conversion of a THz-frequency input signal into DC voltage is done using the…
We evaluate the proposed resonant terahertz (THz) detectors on the base of field-effect transistors (FETs) with split gates, electrically induced lateral p-n junctions, uniform graphene layer (GL) or perforated (in the p-n junction…
Terahertz (THz) response of transistor and integrated circuit yields important information about device parameters and has been used for distinguishing between working and defective transistors and circuits. Using a TCAD model for SiGe HBTs…
We evaluate the terahertz (THz) detectors based on field effect transistor (FET) with the graphene channel {GC} and a floating metal gate (MG) separated from the GC by a black-phosphorus (b-P) or black-arsenic (b-As) barrier layer (BL). The…
Detectors of high-frequency radiation based on high-electron-mobility transistors benefit from low noise, room-temperature operation, and the possibility to perform radiation spectroscopy using gate-tunable plasmon resonance. Despite…
Molecular electronics targets tiny devices exploiting the electronic properties of the molecular orbitals, which can be tailored and controlled by the chemical structure/conformation of the molecules. Many functional devices have been…