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Bioelectrical properties of cells such as relative permittivity, conductivity, and characteristic time constants vary significantly between healthy and malignant cells across different frequencies. These distinctions provide a promising…
The study and modelling of planar capacitors remain highly relevant due to their broad applications. However, their accurate modelling presents significant challenges due to intrinsic high-frequency effects, which include not only parasitic…
Recently discovered ferroelectric nematic (NF) liquid crystals are fluids with a polar orientational order. The electric polarization vector can be aligned by an electric field and by surface anchoring. Here, we explore how the polarization…
It is of great interest to design and make materials in which ferroelectric polarisation is coupled to other order parameters such as lattice, magnetic and electronic instabilities. Such materials will be invaluable in next-generation data…
In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel…
In the bulk, LaCoO3 (LCO) is a paramagnet, yet in tensile strained thin films at low temperature ferromagnetism (FM) is observed, and its origin remains unresolved. Polarized neutron reflectometry (PNR) is a powerful tool to determine the…
Ferromagnetic insulators (FM-Is) are the materials of interest for new generation quantum electronic applications. Here, we have investigated the physical observables depicting FM-I ground states in epitaxial Sm$ _{2} $NiMnO$ _{6} $ (SNMO)…
Ferroelectric materials possess spontaneous polarization that can be used for multiple applications. Owing to a long term development for reducing the sizes of devices, the preparation of ferroelectric materials and devices are entering…
Understanding various aspects of ferroelectricity in hafnia-based nanomaterials is of vital importance for the development of future non-volatile memory and logic devices. Here, the unconventional and weak electromechanical response of…
We investigate a nanoscale dielectric capacitor model consisting of two-dimensional, hexagonal h-BN layers placed between two commensurate and metallic graphene layers using self-consistent field density functional theory. The separation of…
Phase-change materials (PCMs), which are well-established in optical and random-access memories, are increasingly studied for emerging topics such as brain-inspired computing and active photonics. These applications take advantage of the…
We study an ultra-compact plasmonic modulator that can be applied in photonic integrated circuits. The modulator is a metal-insulator-metal waveguide with an additional ultra-thin layer of indium tin oxide (ITO). Bias is applied to the…
We analyze the temperature dependences of the effective dielectric permittivity of P(VDF-TrFE) films with BaTiO3 nanoparticles (with the average size 24 nm). Transition from a weak to a strong nonlinear temperature dependence of the…
Nanoparticles of the ferrimagnetic epsilon-Fe2O3 oxide have been synthesized by sol-gel method. Here, we report on the measurements of the dielectric permittivity as a function of temperature, frequency and magnetic field. It is found that,…
We investigate numerically the homogenized permittivities of composites made of low index dielectric inclusions in a ferroelectric matrix under a static electric field. A refined model is used to take into account the coupling between the…
The ferroelectric polarization switching in ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2, HZO) in the HZO/Al2O3 ferroelectric/dielectric stack is investigated systematically by capacitance-voltage and polarization-voltage…
A simple model is proposed to calculate resistivity, magnetoresistance, and noise spectrum in non-metallic phase-separated manganites containing small metallic droplets (magnetic polarons). The system is taken to be far from the percolation…
HfO2-based ferroelectric films have attracted considerable attention as their nanoscale ferroelectricity and compatibility with cmos technology, fulfilling demands of emerging memory technologies. However, as films scale down,…
Understanding the polarization switching mechanisms at play in ferroelectric materials is crucial for their exploitation in electronic devices. The conventional centrosymmetric reference structure-based mechanism which accounts for…
Measurements of the low-frequency (f<=100 kHz) permittivity and conductivity at T<= 150 K are reported for La(1-x)Ca(x)MnO(3) (0<=x<=1) and Ca(1-y)Sr(y)MnO(3) (0<=y<=0.75) having antiferromagnetic, insulating ground states covering a broad…