Related papers: Two-dimensional ASEP model to study density profil…
We present a systematic study of the morphology of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy which are imaged with ex situ atomic force microscopy. These films show a dramatic range of different surface morphologies…
Chemical vapor deposition (CVD) allows growing transition metal dichalcogenides (TMDs) over large surface areas on inexpensive substrates. In this work, we correlate the structural quality of CVD grown MoS$_2$ monolayers (MLs) on SiO$_2$/Si…
A limited mobility nonequilibrium solid-on-solid dynamical model for kinetic surface growth is introduced as a simple description for the morphological evolution of a growing interface under random vapor deposition and surface diffusion…
The process of protein synthesis in biological systems resembles a one dimensional driven lattice gas in which the particles have spatial extent, covering more than one lattice site. We expand the well studied Totally Asymmetric Exclusion…
The totally asymmetric simple exclusion process (TASEP) is a paradigmatic stochastic model for non-equilibrium physics, and has been successfully applied to describe active transport of molecular motors along cytoskeletal filaments.…
Growth of hard--rod monolayers via deposition is studied in a lattice model using rods with discrete orientations and in a continuum model with hard spherocylinders. The lattice model is treated with kinetic Monte Carlo simulations and…
A one dimensional disordered particle hopping rate asymmetric exclusion process (ASEP) with open boundaries and a random sequential dynamics is studied analytically. Combining the exact results of the steady states in the pure case with a…
With a novel 3D discrete-element method specially developed with adhesive contact mechanics, random loose packings of uniform spherical micron-sized particles are fully investigated. The results show that large velocity, large size or weak…
In this paper, we analyse a model for the growth of three-dimensional walled cells. In this model the biomechanical expansion of the cell is coupled with the geometry of its wall. We consider that the density of building material depends on…
The asymmetric simple exclusion process (ASEP) on a one-dimensional lattice is a system of particles which jump at rates $p$ and $1-p$ (here $p>1/2$) to adjacent empty sites on their right and left respectively. The system is described on…
Epitaxial copper thin films were deposited by magnetron sputtering. The adatoms during deposition are influenced by deposition parameters which cause variations in thin film properties. XRD and FESEM studies were done to get an insight into…
We investigate theoretically 2D electronic transport in Si:P $\delta$-doped layers limited by charged-dopant scattering. Since the carrier density is approximately equal to the dopant impurity density, the density dependent transport shows…
Semiconductor research has shifted towards exploring two-dimensional (2D) materials as candidates for next-generation electronic devices due to the limitations of existing silicon technology. Transition Metal Dichalcogenides (TMDCs) stand…
We consider configurational statistics of three-dimensional heaps of $N$ pieces ($N\gg 1$) on a simple cubic lattice in a large 3D bounding box of base $n \times n$, and calculate the growth rate, $\Lambda(n)$, of the corresponding…
We propose an extension of the totally asymmetric simple exclusion process (TASEP) in which particles hopping along a lattice can be blocked by obstacles that dynamically attach/detach from lattice sites. The model can be thought as TASEP…
We have presented the kinetic study of the very initial growth stages of an ultra thin film (40 $\AA$- 150$\AA$) of Ag sputter-deposited on Si(001) substrate containing native oxide using grazing incidence x-ray reflectivity (GIXR)…
We study finite size effects in the variance of the displacement of a tagged particle in the stationary state of the Asymmetric Simple Exclusion Process (ASEP) on a ring of size $L$. The process involves hard core particles undergoing…
The chemical vapor deposition of polycrystalline diamond (PCD) films is typically done on substrates seeded with diamond nanoparticles. Specular laser reflectance and a continuous film model have been used to monitor the thickness of these…
Direct growth of flat micrometer-sized bilayer graphene islands in between molybdenum disulfide sheets is achieved by chemical vapor deposition of ethylene at about 800 {\deg}C. The temperature assisted decomposition of ethylene takes place…
The growth of graphene during Cu-catalyzed chemical vapor deposition was studied using 12CH4 and 13CH4 precursor gasses. We suggest that the growth begins by the formation of a multilayer cluster. This seed increases its size but the growth…