Related papers: N\'eel Spin-Orbit Torque in Antiferromagnetic Quan…
Historically, the genesis of anomalous Hall effect (AHE) in magnetic materials has always been a fascinating yet controversial topic in the solid state physics community. Recent progress on the understanding of this topic has revealed an…
Reliable and energy efficient magnetization switching by electrically-induced spin-orbit torques is of crucial technological relevance for spintronic devices implementing memory and logic functionality. Here we predict that the strength of…
Insulating altermagnets like MnTe exhibit spin configurations where opposing spins are not only aligned antiparallel but also rotated relative to each other. This is an arrangement reminiscent of antiferromagnetism with a twist of spin…
We consider analytically current-driven dynamics of magnetic N\'{e}el walls in heavy metal/ferromagnetic metal/oxide trilayers where strong spin-orbit coupling and interfacial Dzyaloshinskii-Moriya interaction (i-DMI) coexist. We show that…
Nanoelectromangetomechanical systems (NEMMS) open up a new path for the development of high speed autonomous nanoresonators and signal generators that could be used as actuators, for information processing, as elements of quantum computers…
Recently, antiferromagnetic (AF) materials have attracted rapid attention, because they are considered as outstanding candidates to replace the widely used ferromagnets in the next generation of spintronics. We propose a magnetoresistance…
We report that synthetic antiferromagnets (SAFs) can be efficiently switched by spin-orbit torques (SOTs) and the switching scheme does not obey the usual SOT switching rule. We show that both the positive and negative spin Hall angle…
The anomalous Hall effect (AHE) is a topology-related transport phenomenon being of potential interest in spintronics, because this effect enables the efficient probe of magnetic orders (i.e., data readout in memory devices). It is well…
The field-free spin-orbit torque induced 180{\deg} reorientation of perpendicular magnetization is beneficial for the high performance magnetic memory. The antiferromagnetic material (AFM) can provide higher operation speed than the…
Artificial modulation of a neuronal subset through ion channels activation can initiate firing patterns of an entire neural circuit in vivo. As nanovalves in the cell membrane, voltage-gated ion channels can be artificially controlled by…
Contrary to conventional wisdom that spin dynamics induced by current are exclusive to metallic magnets, we theoretically predict that such phenomena can also be realized in magnetic insulators, specifically in the magnetoelectric…
Spin-polarized antiferromagnets (AFMs), including altermagnets, noncollinear AFMs, and two-dimensional layer-polarized AFMs, have emerged as transformative materials for next-generation spintronic and optoelectronic technologies. These…
The role of spin fluctuations near magnetic phase transitions is crucial for generating various exotic phenomena, including anomalies in the extraordinary Hall effect, excess spin-current generation through the spin-Hall effect (SHE), and…
Magnetism typically arises from the joint effect of Fermi statistics and repulsive Coulomb interactions, which favors ground states with non-zero electron spin. As a result, controlling spin magnetism with electric fields---a longstanding…
Spin-orbit torques (SOTs) are widely used to control magnetization in nanoscale electric systems and are typically assumed to drive skyrmion nucleation and motion in a deterministic manner, especially in materials with strong…
We theoretically propose a mechanism for the anomalous Hall effect (AHE) in an antiferrromagnetic (AFM) state of $\kappa$-type organic conductors. We incorporate the spin-orbit coupling in the effective Hubbard model on the $\kappa$-type…
Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Here we report experiments on the spin-orbit torque induced electrical switching…
Realization of efficient spin-orbit torque switching of the N\'eel vector in insulating antiferromagnets is a challenge, often complicated by spurious effects. Quantifying the spin-orbit torques in antiferromagnet/heavy metal…
The interplay between magnetism and strong electron correlation in magnetic materials discerns a variety of intriguing topological features. Here, we report a systematic investigation of the magnetic, thermodynamic, and electrical transport…
We formulate and quantify the spin-orbit torque (SOT) in intrinsic antiferromagnetic topological insulator $\rm MnBi_2Te_4$ of a few septuple-layer thick, which exhibits conspicuous layer-resolved characteristics. Contrary to known…