Related papers: Interband contributions to nonlinear transport in …
We present a combined theoretical approach to study the nonequilibrium transport properties of nanoscale systems coupled to metallic electrodes and exhibiting strong electron-phonon interactions. We use the Keldysh Green function formalism…
The metal-semiconductor contact is a major factor limiting the shrinking of transistor dimension to further increase device performance. In-plane edge contacts have the potential to achieve lower contact resistance due to stronger orbital…
Unusual features in the bias dependence of spin transport are observed in a Co/Au/NiFe spin valve fabricated on a highly textured Cu(100)/Si(100) Schottky interface, exploiting the local probing capabilities of a Ballistic electron magnetic…
Nonlinear transport has emerged as a powerful approach to probe the quantum geometry of electronic wavefunctions, such as Berry curvature and quantum metric, in topological materials. While nonlinear responses governed by bulk quantum…
We develop an effective tight-binding Hamiltonian for spin-orbit (SO) interaction in bent carbon nanotubes (CNT) for the electrons forming the $\pi$ bonds between the nearest neighbor atoms. We account for the bend of the CNT and the…
Multiple line nodes in energy-band gaps are found in semimetals preserving mirror-reflection symmetry. We classify possible configurations of multiple line nodes with crossing points (crossing line nodes) under point-group symmetry. Taking…
We theoretically study the quantum transport in three-dimensional Weyl electron system in the presence of the charged impurity scattering using a self-consistent Born approximation (SCBA). The scattering strength is characterized by the…
Effect of the spin-involved interaction of electrons with impurity atoms or defects to the transport properties of a two-dimensional electron gas is described by using a simplifying two-component model. Components representing spin-up and…
A semiclassical theory is developed for time-dependent current fluctuations in mesoscopic conductors. The theory is based on the Boltzmann-Langevin equation for a degenerate electron gas. The low-frequency shot-noise power is related to…
The structural inversion asymmetry-induced spin-orbit interaction of conduction band electrons in zinc-blende and wurtzite semiconductor structures is analysed allowing for a three-dimensional (3D) character of the external electric field…
Over the years, Berry curvature, which is associated with the imaginary part of the quantum geometric tensor, has profoundly impacted many branches of physics. Recently, quantum metric, the real part of the quantum geometric tensor, has…
As the dimensions of a conductor approach the nano-scale, quantum effects will begin to dominate its behavior. This entails the exciting possibility of controlling the conductance of a device by direct manipulation of the electron wave…
In this paper the Boltzmann equation describing the carrier transport in a semiconductor is considered. A modified Chapman-Enskog method is used, in order to find approximate solutions in the weakly non-homogeneous case. These solutions…
Electronic transport in narrow gap semiconductors is characterized by spontaneous vertical transitions between carriers in the valence and conduction bands, a phenomenon also known as Zener tunneling. However, this effect is not captured by…
The time-dependent transport through a nano-scale device, consisting of a single spin-degenerate orbital with on-site Coulomb interaction, coupled to two leads, is investigated. Various gate and bias voltage time-dependences are considered.…
Spin-orbit interactions (SOIs) endow light with intriguing properties and applications such as photonic spin-Hall effects and spin-dependent vortex generations. However, it is counterintuitive that SOIs can exist for sound, which is a…
Accurate models of carrier transport are essential for describing the electronic properties of semiconductor materials. To the best of our knowledge, the current models following the framework of the Boltzmann transport equation (BTE)…
An analytic approach to the electron transport phenomena in molecular devices is presented. Analyzed devices are composed of organic molecules attached to the two semi-infinite electrodes. Molecular system is described within the…
A quantum particle transport induced in a spatially-periodic potential by a propagating plane wave has a number important implications in a range of topical physical systems. Examples include acoustically driven semiconductor superlattices…
We introduce a solvable model of a nonlinear double-barrier structure, described by a generalized effective-mass equation with a nonlinear coupling term. This model is interesting in its own right for possible new applications, as well as…