Related papers: Quantum enhanced electric field mapping within sem…
Efficient generation of charge carriers from a metallic surface is a critical challenge in a wide variety of applications including vacuum microelectronics and photo-electrochemical devices. Replacing semiconductors with vacuum/gas as the…
We investigated the possibility of using a layer of quantum dots (QDs) deposited on the microparticle surface for the measurement of the charge the microparticle acquires when immersed into a plasma. To that end, we performed the…
Silicon vacancies in silicon carbide (SiC) have been proposed as interesting candidates for quantum technology applications such as quantum sensing and quantum repeaters. SiC exists in many polytypes with different plane stacking sequences,…
Self-assembled semiconductor quantum dots show remarkable optical and spin coherence properties, which have lead to a concerted research effort examining their potential as a quantum bit for quantum information science1-6. Here, we present…
Developing the isolation and control of ultracold atomic systems to the level of single quanta has led to significant advances in quantum sensing, yet demonstrating a quantum advantage in real world applications by harnessing entanglement…
We measure charge transport in hydrogenated amorphous silicon (a-Si:H) using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances. At high…
As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped…
We report the experimental realization of a quantum silicon carbide microscope (QSiCM) and demonstrate its functionality by imaging magnetic fields generated by electrical currents. We employ a dual-frequency sensing protocol to enhance the…
With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device functionality. Here, we characterize the influence of charged atomic species on…
A point charge in the presence of a metallic nanoshpere is a fundamental setup, which has implications for Raman scattering, enhancement of spontaneous emission of a molecule by an antenna, sensing, and modeling a metallic tip in proximity…
Nitrogen-vacancy (NV) and silicon-vacancy (SiV) color defects in diamond are promising systems for applications in quantum technology. The NV and SiV centers have multiple charge states, and their charge states have different electronic,…
We demonstrate that, by using low-energy positive muon ($\mu^+$) spin spectroscopy as a local probe technique, the profiles of free charge carriers can be directly determined in the accumulation/depletion surface regions of p- or n-type Ge…
In quantum nanoelectronics devices, the electrostatic energy is the largest energy scale at play and, to a large extend, it determines the charge distribution inside the devices. Here, we introduce the Pure Electrostatic Self consistent…
Electro-optical modulators are essential components in optical communication systems. They encode an electrical waveform onto an optical carrier. However, their performance is often limited by inherent electro-optic processes and…
The controlled generation and manipulation of atom-like defects in solids has a wide range of applications in quantum technology. Although various defect centres have displayed promise as either quantum sensors, single photon emitters or…
Point defects in solids promise precise measurements of various quantities. Especially magnetic field sensing using the spin of point defects has been of great interest recently. When optical readout of spin states is used, point defects…
Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the…
We use first-principle Quantum Monte-Carlo (QMC) simulations and numerical exact diagonalization to analyze the low-frequency charge carrier mobility within a simple tight-binding model of molecular organic semiconductors on a…
Silicon carbide is a very promising platform for quantum applications because of extraordinary spin and optical properties of point defects in this technologically-friendly material. These properties are strongly influenced by crystal…
We investigate a singly-charged quantum dot under a strong optical driving field by probing the system with a weak optical field. When the driving field is detuned from the trion transition, the probe absorption spectrum is shifted from the…