Related papers: Thickness-dependent conductivity of nanometric sem…
All non-interacting two-dimensional electronic systems are expected to exhibit an insulating ground state. This conspicuous absence of the metallic phase has been challenged only in the case of low-disorder, low density, semiconducting…
A density-functional-theory based relativistic scattering formalism is used to study charge transport through thin Pt films with room temperature lattice disorder. A Fuchs-Sondheimer specularity coefficient $p \sim 0.5$ is needed to…
We present a simple but powerful method to determine the thicknesses of the accumulation and depletion layers and the distribution curve of injected carriers in organic field effect transistors. The conductivity of organic semiconductors in…
In superconductivity, electrons exhibit unique macroscopic collective quantum behavior that is the key for many modern quantum technologies. This electron behavior stems vastly from coupling to a correlated motion of atoms in the material,…
We have studied the magnetoresistance (MR) and evolution of conductivity with thickness of quench-condensed Bismuth films on substrates of various dielectric constants. Our results indicate a negative intial MR proportional to the square of…
We present measurements of the electrical resistivity, $\rho$, in epitaxial Cr films of different thicknesses grown on MgO (100) substrates, as a function of temperature, $T$. The $\rho(T)$ curves display hysteretic behavior in certain…
We report on the superconducting properties of Nb$_{1-x}$Ti$_x$N thin films of thickness $\sim$ 10 nm, with different Ti fraction $x$ in the range $ 0 \leq x \leq 0.5$, deposited by high temperature chemical vapor deposition. In this…
In semiconductor manufacturing processes, silicon dioxide films are commonly used as barrier layers, insulating layers, and protective layers. Coherence scanning interferometry (CSI) offers thin film thickness measurements with a…
The quantum theory of conductivity of semiconductor objects, to which the quantum wells, wires and dots concern, is constructed. Average values of current and charge densities, induced by a weak electromagnetic field, are calculated. It is…
Boundary scattering of thermal phonons in thin solid films is typically analyzed using Fuchs-Sondheimer theory, which provides a simple equation to calculate the reduction of thermal conductivity as a function of the film thickness.…
Thickness uniformity is regarded as an important parameter in designing thin film devices. However, some applications based on films with non-uniform thickness have recently emerged, such as gas sensors and optimized materials based on the…
The Hall effect is investigated for eight superconducting Fe(Se_0.5_Te_0.5_) thin films grown on MgO and LaSrAlO_4_ substrates with different transition temperatures (T_c_). The normal Hall coefficients (R_H_) have positive values with…
We have studied the electrical conductivity of nanoring-based, transparent conductive films, these being promising elements for flexible electronic devices. Both the wire resistance and the junction resistance were taken into account. We…
Transport characteristics of single crystal bismuth films on Si(111)-7 \times 7 are found to be metallic or insulating at temperature below or above TC, respectively. The transition temperature TC decreases as the film thickness increases.…
We consider the $N$-component Ginzburg-Landau model in the large $N$ limit, the system being embedded in an external constant magnetic field and confined between two parallel planes a distance $L$ apart from one another. On physical…
The electronic structure of V2O3 thin films is studied by means of the augmented spherical wave method as based on density functional theory and the local density approximation. We establish that effects of charge redistribution, induced by…
This work investigates the effect of a scandium nitride buffer layer on the superconducting properties of niobium nitride thin films. The use of a ScN buffer layer significantly improves the characteristics of 29 nm thick NbN films: the…
We have measured the thermal resistances of thin films of the small molecule organic semiconductors bis(triisopropylsilylethynyl) pentacene (TIPS-pn), bis(triethylsilylethynyl) anthradithiophene (TES-ADT) and difluoro…
In this paper, the dynamics of bias stress phenomenon in Sexithiophene (T6) Field Effect Transistors (FETs) has been investigated. T6 FETs have been fabricated by vacuum depositing films with thickness from 10 nm to 130 nm on Si/SiO2…
This fluid dynamics video demonstrates an experiment on superfast thinning of a freestanding thin aqueous film. The production of such films is of fundamental interest for interfacial sciences and the applications in nanoscience. The stable…