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The intrinsic fluctuations of electron spins in semiconductors and atomic vapors generate a small, randomly-varying "spin noise" that can be detected by sensitive optical methods such as Faraday rotation. Recent studies have demonstrated…
Hexagonal boron nitride (hBN) is a wide band gap, van der Waals material that is highly promising for solid-state quantum technologies as a host of optically addressable, paramagnetic spin defects. Intrinsic and extrinsic point defects…
Atom-like defects in hexagonal boron nitride (hBN) provide room-temperature single-photon emission and coherent spin states, making them attractive for quantum-computing and -sensing applications. However, their random spatial and spectral…
Negatively charged boron vacancies ($\small{V_B^-}$) in hexagonal boron nitride (hBN) have recently gained interest as spin defects for quantum information processing and quantum sensing by a layered material. However, the boron vacancy can…
Spin-phonon interactions have a dual role in emerging spin-based quantum technologies. While they can be a limitation to device performance through decoherence, they also serve as a critical resource for coherent spin control, detection,…
Spin noise spectroscopy (SNS) is a new method for studying magnetic resonance and spin dynamics based on measuring the Faraday rotation noise. In strong contrast with methods of nonlinear optics, the spectroscopy of spin noise is considered…
Hexagonal boron nitride (hBN) is a van der Waals material with excellent mechanical properties hosting quantum emitters and optically active spin defects, several of them being sensitive to strain. Establishing optomechanical control of hBN…
A model of dynamic orientation using optimized radiofrequency (RF) irradiation produced perpendicular to the holding field is developed for the spin-1 system required for tensor-polarized fixed-target experiments. The derivation applies to…
The negatively charged boron vacancy (VB-) in hexagonal boron nitride (hBN) has been extensively investigated as it offers a novel playground for two-dimensional quantum sensing, with ultimate proximity to target samples. However, its…
Spin defects in solids offer promising platforms for quantum sensing and memory due to their long coherence times and optical addressability. Here, we integrate a single nitrogen-vacancy (NV) center in diamond with scanning probe microscopy…
Color centers that enable nuclear-spin control without RF fields offer a powerful route towards simplified and scalable quantum devices. Such capabilities are especially valuable for quantum sensing and computing platforms that already find…
Since the initial discovery of optically addressable spins of the negatively charged boron vacancy defect (VB) in hexagonal boron nitride (hBN), substantial progress has been made, enabling promising applications in quantum sensing,…
Hexagonal boron nitride (hBN)-long-known as a thermally stable ceramic-is now available as atomically smooth, single-crystalline flakes, revolutionizing its use in optoelectronics. For nanophotonics, these flakes offer strong…
Quantum sensors using solid-state spin defects excel in the detection of radiofrequency (RF) fields, serving various purposes in communication, ranging, and sensing. For this purpose, pulsed dynamical decoupling (PDD) protocols are…
We report on the local control of the transition frequency of a spin-$1/2$ encoded in two Rydberg levels of an individual atom by applying a state-selective light shift using an addressing beam. With this tool, we first study the spectrum…
Radio Frequency Identification (RFID) and implantable biomedical devices need efficient power and data transfer with very low profile antennas. We propose a low profile electrically small antenna for near-field wireless power and data…
We report an implementation of spin-acoustic resonance in pentacene thin films integrated on a high-quality-factor (high-Q) surface acoustic wave (SAW) resonator on a lithium niobate substrate. Heterogeneous optically detected spin-acoustic…
Optically addressed atomic defects in the solid-state are widely used as single-photon sources and memories for quantum network applications. The solid-state environment allows for a high density of electron and nuclear spins with the…
Hexagonal boron nitride (h-BN) encapsulation significantly improves carrier transport in graphene. This work investigates the benefit of implementing the encapsulation technique in graphene field-effect transistors (GFET) in terms of their…
Mapping the physical dipolar Hamiltonian of a solid-state network of nuclear spins onto a system of nearest-neighbor couplings would be extremely useful for a variety of quantum information processing applications, as well as NMR structural…