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Antiferromagnets have large potential for ultrafast coherent switching of magnetic order with minimum heat dissipation. In novel materials such as Mn$_2$Au and CuMnAs, electric rather than magnetic fields may control antiferromagnetic order…
Antiferromagnets are magnetically ordered materials which exhibit no net moment and thus are insensitive to magnetic fields. Antiferromagnetic spintronics aims to take advantage of this insensitivity for enhanced stability, while at the…
We observe the excitation of collective modes in the THz range driven by the recently discovered N\'{e}el spin-orbit torques (NSOT) in the metallic antiferromagnet Mn$_{2}$Au. Temperature dependent THz spectroscopy reveals a strong…
Efficient manipulation of the N\'eel vector in antiferromagnets can be induced by generation of spin orbit (SOT) or spin-transfer (STT) torques. Here we predict another possibility for antiferromagnetic domain switching by using a non-zero…
Antiferromagnets (AFMs) hold significant potential for spintronic devices owing to their insensitivity to external magnetic fields and the absence of stray fields. Beyond these inherent advantages, an AFM can manipulate the magnetic…
We investigate spin dynamics in the antiferromagnetic (AFM) multiferroic TbMnO3 using optical- pump, terahertz (THz)-probe spectroscopy. Photoexcitation results in a broadband THz transmission change, with an onset time of 25 ps at 6 K that…
Manipulation of antiferromagnetic (AFM) spins by electrical means is on great demand to develop the AFM spintronics with low power consumption. In spite of the electrical modulation of insulated AFMs through coupling between their intrinsic…
Recent advances in tuning the correlated behavior of graphene and transition-metal dichalcogenides (TMDs) have opened a new frontier in the study of many-body physics in two dimensions and promise exciting possibilities for new quantum…
Antiferromagnetic (AFM) semiconductor MnS$_2$ possesses both high-spin and low-spin magnetic phases that can be reversibly switched by applying pressure. With increasing pressure, the high-spin state undergoes pressure-induced metalization…
Femtosecond optical pulses have opened a new frontier in ultrafast dynamics, enabling direct access to fundamental interactions in quantum materials. In antiferromagnets (AFMs), where the fundamental quantum mechanical exchange interaction…
Antiferromagnets (AFMs) are strong candidates for the future spintronic and memory applications largely because of their inherently fast dynamics and lack of stray fields, with Mn2Au being one of the most promising. For the numerical…
Antiferromagnets typically host spin-wave (magnon) excitations in the terahertz (THz) regime, offering a promising platform for high-speed magnonic information technologies. Harnessing these excitations requires sensitive control of their…
Manipulating spin in antiferromagnetic (AFM) materials has great potential in AFM opto-spintronics. Laser pulses can induce a transient ferromagnetic (FM) state in AFM metallic systems, but have never been proven in two-dimensional (2D) AFM…
Interplay between magnetic ordering and topological electrons not only enables new topological phases but also underpins electrical control of magnetism. Here we extend the Kane-Mele model to include the exchange coupling to a collinear…
Spin-polarized antiferromagnets (AFMs), including altermagnets, noncollinear AFMs, and two-dimensional layer-polarized AFMs, have emerged as transformative materials for next-generation spintronic and optoelectronic technologies. These…
Antiferromagnetic (AFM) materials possess a well-recognized potential for ultrafast data processing thanks to their intrinsic ultrafast spin dynamics, absence of stray fields, and large spin transport effects. The very same properties,…
We theoretically and numerically study the terahertz auto oscillations in thin-film metallic non-collinear coplanar antiferromagnets (AFMs), such as $\mathrm{Mn_{3}Sn}$ and $\mathrm{Mn_{3}Ir}$, under the effect of anti-damping spin-torque…
The unique features of ultrafast spin dynamics and the absence of macroscopic magnetization in antiferromagnetic (AFM) materials provide a distinct route towards high-speed magnetic storage devices with low energy consumption and high…
Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories…
Collinear antiferromagnetic (AFM) materials have unique promise of no stray fields, display ultrafast dynamics, and being robust against perturbation filed which motivates the extensive research of antiferromagnetic spintronics. However,…