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Related papers: Improper flexoelectricity in hexagonal rare-earth …

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Using first principles calculations, we study the microscopic origin of ferroelectricity (FE) induced by magnetic order in the orthorhombic HoMnO3. We obtain the largest ferroelectric polarization observed in the whole class of improper…

Materials Science · Physics 2009-11-13 Silvia Picozzi , Kunihiko Yamauchi , Biplab Sanyal , Ivan A. Sergienko , Elbio Dagotto

Multiferroic hexagonal rare-earth ferrites (h-RFeO3, R=Sc, Y, and rare earth), in which the improper ferroelectricity and canted antiferromagnetism coexist, have been advocated as promising candidates to pursue the room-temperature…

Materials Science · Physics 2025-09-09 Xin Li , Yu Yun , Xiaoshan Xu

Symmetry breaking at surfaces and interfaces and the capability to support large strain gradients in nanoscale systems enable new forms of electromechanical coupling. Here we introduce the concept of quantum flexoelectricity, a phenomenon…

Materials Science · Physics 2009-11-13 Sergei V. Kalinin , Vincent Meunien

This review examines the conditions that lead to the formation of flexo-sensitive chiral polar structures in thin films and core-shell ferroelectric nanoparticles. It also analyzes possible mechanisms by which the flexoelectric effect…

We elucidate the flexoelectricity of materials in the high strain gradient regime, of which the underlying mechanism is less understood. By using the generalized Bloch theorem, we uncover a strong flexoelectric-like effect in bent thinfilms…

Materials Science · Physics 2023-09-08 Ya-Xun Wang , Jian-Gao Li , Gotthard Seifert , Kai Chang , Dong-Bo Zhang

The behavior of ferroelectricity at the nanoscale is the focus of increasing research activity because of intense interest in the fundamental nature of spontaneous order in condensed-matter systems and because of the many practical…

Hafnium oxide (HfO2)-based ferroelectrics offer remarkable promise for memory and logic devices in view of their compatibility with traditional silicon CMOS technology, high switchable polarization, good endurance and thickness scalability.…

Applied Physics · Physics 2020-04-29 Liam Collins , Umberto Celano

The polarization response of a material to a strain gradient, known as flexoelectricity, holds great promise for novel electromechanical applications. Despite considerable recent progress, however, the effect remains poorly understood. From…

Materials Science · Physics 2014-12-03 Massimiliano Stengel

The suppression of ferroelectricity in ultrathin films of improper ferroelectric hexagonal ferrites or manganites has been attributed to the effect of interfacial clamping, however, the quantitative understanding and related…

Materials Science · Physics 2025-09-09 Xin Li , Yu Yun , Xiaoshan Xu

Using Landau-Ginzburg-Devonshire theory, we considered the impact of the flexoelectro-chemical coupling on the size effects inpolar properties and phase transitions of thin ferroelectric films with a layer of elastic defects. We…

A centrosymmetric stress cannot induce a polar response in centric materials, piezoelectricity is, for example, possible only in non-centrosymmetric structures. An exception is meta-materials with shape asymmetry, which may be polarized by…

Materials Science · Physics 2017-07-18 Alberto Biancoli , Chris M. Fancher , Jacob L. Jones , Dragan Damjanovic

Macroscopic descriptions of ferroelectrics have an obvious appeal in terms of efficiency and physical intuition. Their predictive power, however, has often been thwarted by the lack of a systematicp rocedure to extract the relevant…

Materials Science · Physics 2022-06-07 Oswaldo Diéguez , Massimiliano Stengel

The direction of ferroelectric polarization is prescribed by the symmetry of the crystal structure. Therefore, rotation of the polarization direction is largely limited, despite the opportunity it offers in understanding important…

We used first-principles calculations to investigate the existence and origin of the ferroelectric in- stability in the ABF3 fluoro-perovskites. We find that many fluoro-perovskites have a ferroelectric instability in their high symmetry…

Materials Science · Physics 2014-09-03 A. C. Garcia-Castro , N. A. Spaldin , A. H. Romero , E. Bousquet

Using the classic ferroelectric BaTiO$_3$ as an example, we show that the 180 degree ferroelectric domain wall, long considered to be of Ising-type and charge neural, contains both Bloch and Neel type polarization components, and is thus…

Flexoelectricity is universal in all dielectrics, effective at high temperatures, and a promising transduction technique for nanoelectromechanical systems (NEMS). However, as flexoelectricity is still in its early stages, many aspects…

Materials Science · Physics 2024-10-03 Daniel Moreno-Garcia , Luis Guillermo Villanueva

Flexoelectricity is defined as the coupling between strain gradient and polarization, which is expected to be remarkable at nanoscale. However, measuring the flexoelectricity at nanoscale is challenging. In the present work, an analytical…

Materials Science · Physics 2016-05-03 Hao Zhou , Yongmao Pei , Jiawang Hong , Daining Fang

A reduction of polarization in ultra-thin ferroelectric films appears to be fundamental to ferroelectricity at the nanoscale. For the model system PbTiO3 on SrTiO3, we report observation of the polarization vs. thickness relation. Distinct…

Materials Science · Physics 2007-05-23 Rene Meyer , Arturas Vailionis , Paul. C. McIntyre

Hyperferroelectrics are receiving a growing interest thanks to their unique property to retain a spontaneous polarization even in presence of a depolarizing field. Nevertheless, general microscopic mechanisms driving hyperferroelectricity,…

Materials Science · Physics 2021-02-03 Mohamed Khedidji , Danila Amoroso , Hania Djani

We report on the dielectric properties of epitaxial [001] and [100]-textured thin films of antiferromagnetic orthorhombic YMnO3 and their variation under compressive epitaxial strain. It is found that weakly strained YMnO3 films are…

Materials Science · Physics 2010-12-15 J. Fontcuberta , I. Fina , L. Fàbrega , F. Sánchez , X. Martí , V. Skumryev