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Enhancing the switching speed of oxide-based memristive devices at a low voltage level is crucial for their use as non-volatile memory and their integration into emerging computing paradigms such as neuromorphic computing. Efforts to…
The mechanism of resistive switching in two-dimensional (2D) semiconductor-based memristors is intriguing, and our conventional knowledge of bulk-oxide based memristors does not apply to these devices. Experimental data indicate that the…
We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 {\mu}W) and energy (<200 fJ/bit/{\mu}m2), low read-power (~nW), and high endurance (>millions of cycles). To understand their…
The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling…
The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in one cell. A promising candidate is the redox-based resistive…
The resistive switching phenomena of HfO2 films grown by metalorganic chemical vapor deposition was studied for the application of ReRAM devices. In the fabricated Pt/HfO2/TiN memory cells, the bipolar resistive switching characteristics…
Resistive switching (RS) effect observed in capacitor-like metal/insulator/metal junctions belongs to the most promising candidates for next generation of memory cell technology. It is based upon a sudden change of the junction resistance…
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that…
Memristors are prominent passive circuit elements with promising futures for energy-efficient in-memory processing and revolutionary neuromorphic computation. State-of-the-art memristors based on two-dimensional (2D) materials exhibit…
Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast…
Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming conductive nanofilaments within solid-state memory devices, enabling their resistive switching capacity. The quantitative spatial…
Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 10 nm. The resistive switching behaviour of transition metal oxides and the associated memristor device is emerging…
Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with…
Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS$_2$) as the active material. The vertical heterostructures consist of silicon, vertically aligned MoS$_2$ and chrome / gold metal…
Memristive devices, whose resistance can be controlled by applying a voltage and further retained, are attractive as possible circuit elements for neuromorphic computing. This new type of devices poses a number of both technological and…
A Redox Flow Battery (RFB) is one of the promising energy storage systems in power grid. An RFB has many advantages such as a quick response, a large capacity, and a scalability. Due to these advantages, an RFB can operate in mixed time…
The translation of emerging application concepts that exploit Resistive Random Access Memory (ReRAM) into large-scale practical systems requires realistic, yet computationally efficient, empirical models that can capture all observed…
Transition-metal oxide films, demonstrating the effects of both threshold and nonvolatile memory resistive switching, have been recently proposed as candidate materials for storage-class memory. In this work we describe some experimental…
Electrical control of oxygen off-stoichiometry of transition-metal oxides at room temperature is a desired strategy to simultaneously switch the electrical conductance and magnetism of the device. Although the use of the electrochemical…
Advanced neural interfaces mediate a bio-electronic link between the nervous system and microelectronic devices, bearing great potential as innovative therapy for various diseases. Spikes from a large number of neurons are recorded leading…