Related papers: Quantifying Implantation Induced Damage and Point …
Digital image correlation (DIC) is a well-established, non-invasive technique for tracking and quantifying the deformation of mechanical samples under strain. While it provides an obvious way to observe incremental and aggregate…
Recent interest in structure solution and refinement using electron diffraction (ED) has been fuelled by its inherent advantages when applied to crystals of sub-micron size, as well as a better sensitivity to light elements. Currently, data…
Silicon carbide (SiC) planar PiN diodes from two different manufacturers were irradiated with 252.7 MeV protons from a medical synchrotron. Over the course of two 8h irradiation shifts, the samples were exposed to increasing fluences…
Defects in silicon carbide are of intense and increasing interest for quantum-based applications due to this material's properties and technological maturity. We calculate the multi-particle symmetry adapted wave functions of the negatively…
We present an accurate measurement and a quantitative analysis of electron-beam induced displacements of carbon atoms in single-layer graphene. We directly measure the atomic displacement ("knock-on") cross section by counting the lost…
Electron tomography is a technique used in both materials science and structural biology to image features well below optical resolution limit. In this work, we present a new algorithm for reconstructing the three-dimensional(3D)…
Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air.…
We performed wave-optics-based numerical simulations at mid-infrared wavelengths to investigate how the presence or absence of entrance slits and optical aberrations affect the spectral resolving power $R$ of a compact,…
Electron-impact ionization cross sections for the 1s2s 1S and 1s2s 3S metastable states of Li+ are calculated using both perturbative distorted-wave and non-perturbative close-coupling methods. Term-resolved distorted-wave calculations are…
Irradiation damage is a key physics issue for semiconductor devices under extreme environments. For decades, the ionization-irradiation-induced damage in transistors with silica-silicon structures under constant dose rate is modeled by a…
Optomechanical resonators were fabricated on a silicon-on-insulator (SOI) substrate that had been implanted with phosphorus donors. The resonators' mechanical and optical properties were then measured (at 6 kelvin and room temperature)…
With X-ray radiation protection and dose management constantly gaining interest in interventional radiology, novel procedures often undergo prospective dose studies using anthropomorphic phantoms to determine expected dose values. Due to…
Inter-crystal scattering (ICS) in Positron Emission Tomography (PET) is commonly regarded as a degradation effect that might compromise the image spatial resolution. In parallel, the inclusion of ICS events has also been recognized as a…
The role of interface states and dielectric mismatch is studied in ultrathin P-doped silicon-on-insulator (SOI) films with thickness of the device layer ($H_{SOI}$) varying from 30 to 8 nm and dopant concentration ($n_{D}$) ranging from…
Electrical impedance tomography (EIT) enables non-invasive, spatially continuous reconstruction of internal conductivity distributions, providing full field sensing beyond conventional point measurements. Here, we report the first in situ…
High-Resolution Electron Backscatter Diffraction (HR-EBSD) has advanced rapidly in recent years, significantly improving elastic strain measurements and dislocation density evaluation with submicron spatial resolution. To achieve better…
Ion implantation is widely used to modify the structural, electrical and optical properties of materials. By appropriate masking, this technique can be used to define nano- and micro-structures. However, depending on the type of mask used,…
Structural and compositional inhomogeneity is common in zeolites and considerably affects their properties. Conventional transmission electron microscopy (TEM) cannot provide sufficient information on local structures in zeolites due to the…
The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step…
Solid-state spin qubits within silicon crystals at mK temperatures show great promise in the realisation of a fully scalable quantum computation platform. Qubit coherence times are limited in natural silicon owing to coupling to the isotope…