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Magnetic sensors based on the magnetoresistance effects have a promising application prospect due to their excellent sensitivity and advantages in terms of the integration. However, competition between higher sensitivity and larger…
Spin Hall Effect is relativistic quantum mechanical effect which enables non-magnetic materials show magnetic phenomena without the application of a magnetic field. With spin Hall Effect, one can realize spintronics devices operating purely…
The development of an innovative position sensitive pixelated sensor to detect and measure with high precision the coordinates of the ionizing particles is proposed. The silicon avalanche pixel sensors (APiX) is based on the vertical…
The negatively-charged nitrogen vacancy (NV$^{-}$) center in diamond is widely used for quantum sensing since the sensitivity of the spin triplet in the electronic ground state to external perturbations such as strain and electromagnetic…
An intriguing feature of spintronics is the use of pure spin-currents to manipulate magnetization, e.g., spin-currents can switch magnetization in spin-torque MRAM, a next-generation DRAM alternative. Giant spin-currents via the spin Hall…
We report on investigation of spin Hall magnetoresistance sensor based on NiFe/AuxPt1-x bilayers. Compared to NiFe/Pt, the NiFe/AuxPt1-x sensor exhibits a much lower power consumption (reduced by about 57%), due to 80% enhancement of…
The NiBi$_{3}$ compound exhibits a compelling interplay between superconductivity and magnetism, further enriched by topological characteristics that make it an exceptional platform for exploring emergent electronic phenomena. Here, we…
Fabrication, characterization and comparison of gold and graphene micro- and nano-size Hall sensors for room temperature scanning magnetic field microscopy applications is presented. The Hall sensors with active areas from 5 $\mu$m down to…
When a spin-splitting field is introduced to a thin film superconductor, the spin currents polarized along the field couples to energy currents that can only decay via inelastic scattering. We study spin and energy injection into such a…
For the Inner Tracking System 3 (ITS3) upgrade, the ALICE experiment at CERN requires monolithic active pixel sensors of dimensions up to 97~mm$\,\times\,$266~mm, occupying a large fraction of a 300 mm wafer. To manufacture such a…
We present spiral resonators of thin film niobium (Nb) that exhibit large geometric inductance, high critical magnetic fields and high single photon quality factors. These low loss geometric inductors can be a compelling alternative to…
Stemming from antiferromagnetic coupling, exchange bias allows inverted hysteresis in a magnetic system. Such room temperature magnetic reversal has yet to be observed in an amorphous antiferromagnet. Furthermore, the impact of this…
Nonreciprocal devices such as circulators and isolators belong to an important class of microwave components employed in applications like the measurement of mesoscopic circuits at cryogenic temperatures. The measurement protocols usually…
The ALICE Inner Tracking System has been recently upgraded to a full silicon detector consisting entirely of MAPS, arranged in seven concentric layers around the LHC beam pipe. Further ahead, during the LHC Long Shutdown 3, the ALICE…
Within this work a passive and wireless magnetic sensor, to monitor linear displacements is proposed. We exploit recent advances in 3D printing and fabricate a polymer bonded magnet with a spatially linear magnetic field component…
Devices enabling early detection of low concentrations of leaking hydrogen and precision measurements in a wide range of hydrogen concentrations in hydrogen storage systems are essential for the mass-production of fuel-cell vehicles and,…
We review the recently discovered spin Hall magnetoresistance (SMR) and related effects from a theoretical point of view. The SMR is observed in bilayers of a magnetic insulator and a metal, in which spin currents aregenerated in the normal…
In this work, we present an experimental study of spin mediated enhanced negative magnetoresistance in Ni80Fe20 (50 nm)/p-Si (350 nm) bilayer. The resistance measurement shows a reduction of ~2.5% for the bilayer specimen as compared to…
Incorporating functional molecules into sensor devices is an emerging field in molecular electronics that aims at exploiting the sensitivity of different molecules to their environment and turning it into an electrical signal. Among the…
Inertial sensors that measure the acceleration of ultracold atoms promise unrivalled accuracy compared to classical equivalents. However, atomic systems are sensitive to various perturbations, including magnetic fields, which can introduce…