Related papers: Spin filtering with insulating altermagnets
Antiferromagnetic (AFM) materials offer a promising platform for exploring novel couplings between altermagnetic (AM) spin-splitting and magneto-optical Kerr effect (MOKE), with potential applications in next-generation quantum…
Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…
We have theoretically designed the half-metallic (HM) antiferromagnets (AFMs) in thiospinel systems, $\rm Mn(CrV)S_{4}$ and $\rm Fe_{0.5}Cu_{0.5}(V_{0.5}Ti_{1.5})S_{4}$, based on the electronic structure studies in the local-spin-density…
Searching for novel antiferromagnetic materials with large magnetotransport response is highly demanded for constructing future spintronic devices with high stability, fast switching speed, and high density. Here we report a colossal…
The energy of exchange coupled antiferromagnetic insulators (AFMIs) is a periodic function of the relative in-plane orientation of the N\'{e}el vector fields. We show that this leads to oscillations in the relative magnetization of exchange…
The antiferromagnetic (AFM) materials are robust to external magnetic perturbation due to missing any net magnetic moment. In general, the spin splitting in the band structures disappears in these antiferromagnets. However, the…
Using first-principles quantum-transport calculations, we investigate spin-dependent electronic and transport properties of antiferromagnetic tunnel junctions (AFMTJs) that consist of (110)-oriented antiferromagnetic (AFM) metal RuO$_{2}$…
Spintronics is expected as the next-generation technology based on the novel notch of spin degree of freedom of electrons. Half metals, a class of materials which behave as a metal in one spin direction and an insulator in the opposite spin…
Large magnetoresistance effect controlled by electric field rather than magnetic field or electric current is a preferable routine for designing low power consumption magnetoresistance-based spintronic devices. Here we propose an…
Light-matter interaction has become one of the promising routes to manipulating various physical feature of quantum materials in an ultrafast kinetics. In this work, we focus on the nonlinear optical effects of the spintronic behavior in…
Altermagnetism (AM), a newly discovered magnetic state, ingeniously integrates the properties of ferromagnetism and antiferromagnetism, representing a significant breakthrough in the field of magnetic materials. Despite experimental…
Altermagnets offer a unique pathway to functional spintronics by combining vanishing magnetization with large spin splitting. Here, we demonstrate that the canonical d-wave altermagnet KV2Se2O can deliver giant tunneling magnetoresistance…
Antiferromagnetic tunnel junctions (AFMTJs) can exhibit large tunneling magnetoresistance (TMR), making them promising candidates for ultrafast and field-robust spintronic devices. Here, we elucidate the role of band symmetry in governing…
Magnetic tunnel junctions (MTJs) are key components of spintronic devices, such as magnetic random-access memories. Normally, MTJs consist of two ferromagnetic (FM) electrodes separated by an insulating barrier layer. Their key functional…
Altermagnets are a novel class of fully spin-compensated magnetic materials that nevertheless have spin-split electronic bands, offering novel perspectives for spintronics applications. Based on a rigorous analysis of altermagnetic…
The helimagnetic order describes a non-collinear spin texture of antiferromagnets, arising from competing exchange interactions. Although collinear antiferromagnets are elemental building blocks of antiferromagnetic (AFM) spintronics, the…
The switching speed and the write current required for spin-transfer-torque reversal of spintronic devices such as magnetic tunnel junctions (MTJ) currently hinder their wide implementation into memory and logic devices. This problem is…
Altermagnetism is an emerging series of unconventional magnetic materials characterized by time-reversal symmetry breaking and spin-split bands in the momentum space with zero net magnetization. Metallic altermagnets offer unique advantages…
Altermagnetic (AM) materials exhibit non-relativistic, momentum-dependent spin-split states, ushering in new opportunities for spin electronic devices. While the characteristics of spin-splitting have been documented within the framework of…
Antiferromagnetic (AFM) materials with zero or vanishingly small macroscopic magnetization are nowadays the constituent elements of spintronic devices. However, possibility to use them as active elements that show nontrivial controllable…