Related papers: Corrigendum to: A Systematic Study of DDR4 DRAM Fa…

As process technology scales down to smaller dimensions, DRAM chips become more vulnerable to disturbance, a phenomenon in which different DRAM cells interfere with each other's operation. For the first time in academic literature, our ISCA…

Hardware faults on the regular 2-D computing array of a typical deep learning accelerator (DLA) can lead to dramatic prediction accuracy loss. Prior redundancy design approaches typically have each homogeneous redundant processing element…

Our ISCA 2014 paper provided the first scientific and detailed characterization, analysis, and real-system demonstration of what is now popularly known as the RowHammer phenomenon (or vulnerability) in modern commodity DRAM chips, which are…

RowHammer attacks are a growing security and reliability concern for DRAMs and computer systems as they can induce many bit errors that overwhelm error detection and correction capabilities. System-level solutions are needed as process…

Voltage underscaling below the nominal level is an effective solution for improving energy efficiency in digital circuits, e.g., Field Programmable Gate Arrays (FPGAs). However, further undervolting below a safe voltage level and without…

As High-Performance Computing (HPC) systems strive towards the exascale goal, studies suggest that they will experience excessive failure rates. For this reason, detecting and classifying faults in HPC systems as they occur and initiating…

Variation has been shown to exist across the cells within a modern DRAM chip. We empirically demonstrate a new form of variation that exists within a real DRAM chip, induced by the design and placement of different components in the DRAM…

In order to achieve fault tolerance, highly reliable system often require the ability to detect errors as soon as they occur and prevent the speared of erroneous information throughout the system. Thus, the need for codes capable of…

State-of-the-art DRAM read disturbance mitigations rely on the read disturbance threshold (RDT) (e.g., the number of aggressor row activations needed to induce the first read disturbance bitflip) to securely and performance- and…

Our ISCA 2013 paper provides a fundamental empirical understanding of two major factors that make it very difficult to determine the minimum data retention time of a DRAM cell, based on the first comprehensive experimental characterization…

Embedded RAM blocks (BRAMs) in field programmable gate arrays (FPGAs) are susceptible to single event effects (SEEs) induced by environmental factors such as cosmic rays, heavy ions, alpha particles and so on. As technology scales, the…

Modern DRAM is vulnerable to read disturbance (e.g., RowHammer and RowPress) that significantly undermines the robust operation of the system. Repeatedly opening and closing a DRAM row (RowHammer) or keeping a DRAM row open for a long…

Motivated by DNA based data storage system, we investigate the errors that occur when synthesizing DNA strands in parallel, where each strand is appended one nucleotide at a time by the machine according to a template supersequence. If…

We experimentally demonstrate a new widespread read disturbance phenomenon, ColumnDisturb, in real commodity DRAM chips. By repeatedly opening or keeping a DRAM row (aggressor row) open, we show that it is possible to disturb DRAM cells…

Recent advances in reprogrammable hardware (e.g., FPGAs) and memory technology (e.g., DDR4, HBM) promise to solve performance problems inherent to graph processing like irregular memory access patterns on traditional hardware (e.g., CPU).…

Large-scale datacenters often experience memory failures, where Uncorrectable Errors (UEs) highlight critical malfunction in Dual Inline Memory Modules (DIMMs). Existing approaches primarily utilize Correctable Errors (CEs) to predict UEs,…

Over the past decade, Deep Learning (DL) has become an integral part of our daily lives. This surge in DL usage has heightened the need for developing reliable DL software systems. Given that fault localization is a critical task in…

As DRAM technology continues to evolve towards smaller feature sizes and increased densities, faults in DRAM subsystem are becoming more severe. Current servers mostly use CHIPKILL based schemes to tolerate up-to one/two symbol errors per…

In this paper, we propose DeepRL4FL, a deep learning fault localization (FL) approach that locates the buggy code at the statement and method levels by treating FL as an image pattern recognition problem. DeepRL4FL does so via novel code…

This paper summarizes our work on experimentally analyzing, exploiting, and addressing vulnerabilities in multi-level cell NAND flash memory programming, which was published in the industrial session of HPCA 2017, and examines the work's…