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Quantum photonics plays a crucial role in the development of novel communication and sensing technologies. Color centers hosted in silicon carbide and diamond offer single photon emission and long coherence spins that can be scalably…

Applied Physics · Physics 2018-06-20 Marina Radulaski , Jelena Vuckovic

The unrivaled maturity of its nanofabrication makes silicon a promising hardware platform for quantum information processing. To this end, efficient single-photon sources and spin-photon interfaces have been implemented by integrating color…

Quantum Physics · Physics 2026-01-21 Johannes Früh , Fabian Salamon , Andreas Gritsch , Alexander Ulanowski , Andreas Reiserer

Finding the right material platform for engineering efficient photonic interfaces to solid state emitters has been a long-standing bottleneck for scaling up solid state quantum systems. In this work, we demonstrate that nitrogen-rich…

Applied Physics · Physics 2025-05-16 Joe A. Smith , Jorge Monroy-Ruz , John G. Rarity , Krishna C. Balram

The integration of coherent quantum emitters with silicon photonic platforms essential for scalable quantum technologies. We demonstrate electrically controlled self-assembled quantum dots embedded in GaAs waveguides bonded onto a SiO2/Si…

The study of defect centers in silicon has been recently reinvigorated by their potential applications in optical quantum information processing. A number of silicon defect centers emit single photons in the telecommunication $O$-band,…

We demonstrate that nanodiamonds fabricated to incorporate silicon-vacancy (Si-V) color centers provide bright, spectrally narrow, and stable cathodoluminescence (CL) in the near-infrared. Si-V color centers containing nanodiamonds are…

Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon…

Semiconductor quantum dots (QDs) are key building blocks for photonic quantum technologies, enabling practical sources of non-classical light. A central challenge for scalable integration is the direct epitaxial growth of high-quality…

The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent…

Mesoscale and Nanoscale Physics · Physics 2010-05-12 G. Katsaros , P. Spathis , M. Stoffel , F. Fournel , M. Mongillo , V. Bouchiat , F. Lefloch , A. Rastelli , O. G. Schmidt , S. De Franceschi

Excitons -- bound electron-hole pairs -- play a central role in light-matter interaction phenomena, and are crucial for wide-ranging applications from light harvesting and generation to quantum information processing. A long-standing…

Mesoscale and Nanoscale Physics · Physics 2023-08-15 Jenny Hu , Etienne Lorchat , Xueqi Chen , Kenji Watanabe , Takashi Taniguchi , Tony F. Heinz , Puneet A. Murthy , Thibault Chervy

We review recent advances towards the realization of quantum networks based on atom-like solid-state quantum emitters coupled to nanophotonic devices. Specifically, we focus on experiments involving the negatively charged silicon-vacancy…

Quantum Physics · Physics 2017-12-20 Alp Sipahigil , Mikhail D. Lukin

Defect emitters in silicon are promising contenders as building blocks of solid-state quantum repeaters and sensor networks. Here we investigate a family of possible isoelectronic emitter defect complexes from a design standpoint. We show…

Quantum Physics · Physics 2025-01-31 Péter Udvarhelyi , Prineha Narang

Semiconducting single-walled carbon nanotubes show extraordinary electronic and optical properties, such as high charge carrier mobilities and diameter-dependent near-infrared photoluminescence. The introduction of sp3 defects in the carbon…

Optics · Physics 2021-11-10 Jana Zaumseil

By means of ab-initio calculations we investigate the optical properties of pure a-SiN$_x$ samples, with $x \in [0.4, 1.8]$, and samples embedding silicon nanoclusters (NCs) of diameter $0.5 \leq d \leq 1.0$ nm. In the pure samples the…

Mesoscale and Nanoscale Physics · Physics 2012-05-03 R. Guerra , M. Ippolito , S. Meloni , S. Ossicini

Spin-active colour centres in 4H silicon carbide are promising candidates as building blocks for quantum information applications. To increase the photon count rate of the emitters at low temperatures, the colour centres must be integrated…

Photonic quantum technologies promise to repeat the success of integrated nanophotonic circuits in non-classical applications. Using linear optical elements, quantum optical computations can be performed with integrated optical circuits and…

We present an all-silicon source of near-infrared linearly-polarized single photons, fabricated by nanoscale positioning of a color center in a silicon-on-insulator microcavity. The color center consists of a single W center, created at a…

Silicon carbide (SiC) is a highly promising material for the rapidly growing UV detection industry due to its visible-blindness, low dark current, and exceptional thermal and chemical stability. Despite these advantages, the performance of…

Applied Physics · Physics 2026-03-18 Joonas Isometsä , Auguste Bieleviciute , Xiaolong Liu , Ville Vähänissi , Hele Savin

Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metastable electron spin triplet. The G center is a unique defect…

Solid state quantum emitters with spin registers are promising platforms for quantum communication, yet few emit in the narrow telecom band necessary for low-loss fiber networks. Here we create and isolate near-surface single vanadium…

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