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A robust quantum light source operating upon electrical injection at ambient conditions is desirable for practical implementation of quantum technologies, such as quantum key distribution or metrology. Color centers in diamond are promising…
Silicon carbide (SiC) is the leading wide-bandgap semiconductor material, providing mature doping and device fabrication. Additionally, SiC hosts a multitude of optically active point defects (color centers) and is relevant for many…
Efficient generation of single photons on demand at a high repetition rate is a key to the practical realization of quantum-communication networks and optical quantum computations. Color centers in diamond are considered to be the most…
Color centers in Si could serve as both efficient quantum emitters and quantum memories with long coherence times in an all-silicon platform. Of the various known color centers, the T center holds particular promise because it possesses a…
The negatively-charged silicon vacancy center ($\rm V_{Si}^-$) in silicon carbide (SiC) is an emerging color center for quantum technology covering quantum sensing, communication, and computing. Yet, limited information currently available…
Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window for in-vivo imaging and fiber communications due to a large…
The recent discovery of color centers with optically addressable spin states in 3C silicon carbide (SiC) similar to the negatively charged nitrogen vacancy center in diamond has the potential to enable the integration of defect qubits into…
Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect…
A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on…
Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical…
The lack of straightforward epitaxial integration of useful telecom lasers on silicon remains the major bottleneck for bringing optical interconnect technology down to the on-chip level. Crystalline silicon itself, an indirect…
Triangular cross-section SiC photonic devices have been studied as an efficient and scalable route for integration of color centers into quantum hardware. In this work, we explore efficient collection and detection of color center emission…
The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform for on-chip optical interconnects and quantum optical applications. Monolithic integration of both material systems is a…
Silicon photoluminescence and lasing have been critical issues to breakthrough bottlenecks in the understanding of luminescence mechanisms. Unfortunately, long-standing disputes about the exciton recombination mechanism and fluorescence…
Silicon carbide is evolving as a prominent solid-state platform for the realization of quantum information processing hardware. Angle-etched nanodevices are emerging as a solution to photonic integration in bulk substrates where color…
Single-photon sources represent a key enabling technology in quantum optics, and single colour centres in diamond are a promising platform to serve this purpose, due to their high quantum efficiency and photostability at room temperature.…
Individual color centers in diamond are promising for near-term quantum technologies including quantum key distribution and metrology. Here we show fabrication of a new color center which has photophysical properties surpassing those of the…
The recently demonstrated electroluminescence of color centers in diamond makes them one of the best candidates for room temperature single-photon sources. However, the reported emission rates are far off what can be achieved by…
Colour centres in silicon have great potential as single photon sources for quantum technologies. Some of them - like the T centre - also possess optically-active spins that enable spin-photon interfaces for generating entangled photons and…
We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer…