Related papers: Spin relaxation in graphite due to spin-orbital-ph…
We analyze the nuclear magnetic relaxation rate $(1/T_1)_{orb}$ due to the coupling of nuclear spin to the orbital moment of itinerant electrons in metals. In the clean non--interacting case, contributions from large--distance current…
Spin-lattice relaxation within the nitrogen-vacancy (NV) center's electronic ground-state spin triplet limits its coherence times, and thereby impacts its performance in quantum applications. We report measurements of the relaxation rates…
We calculate electron and nuclear spin relaxation rates in a quantum dot due to the combined action of Nyquist noise and electron-nuclei hyperfine or spin-orbit interactions. The relaxation rate is linear in the resistance of the gate…
Hole spins in semiconductors are a potential qubit alternative to electron spins. In nuclear-spin-rich host crystals like GaAs, the hyperfine interaction of hole spins with nuclei is considerably weaker than that for electrons, leading to…
We study the relaxation of a single electron spin in a circular gate-tunbable quantum dot in gapped graphene. Direct coupling of the electron spin to out-of-plane phonons via the intrinsic spin-orbit coupling leads to a relaxation time T_1…
Electron spin relaxation in bulk III-V semiconductors is investigated from a fully microscopic kinetic spin Bloch equation approach where all relevant scatterings, such as, the electron--nonmagnetic-impurity, electron-phonon,…
An atomistic method of calculating the spin-lattice relaxation times ($T_1$) is presented for donors in silicon nanostructures comprising of millions of atoms. The method takes into account the full band structure of silicon including the…
Electron spin qubits operating at atomic clock transitions exhibit exceptionally long coherence times, making them promising candidates for scalable quantum information applications. In solid-state systems, interactions between qubits and…
The understanding of spin dynamics and relaxation mechanisms in clean graphene and the upper time and length scales on which spin devices can operate are prerequisites to realizing graphene spintronic technologies. Here we theoretically…
The longitudinal spin relaxation time, T1, in a Si/SiGe quantum well is determined from the saturation of the ESR signal. We find values of a few microseconds. Investigations of T1 as a function of Fermi energy, concentration of scattering…
Carbon based systems are prominent candidates for a solid-state spin-qubit due to weak spin-orbit and hyperfine interactions in combination with a low natural abundance of spin carrying isotopes. We consider the effect of the hyperfine…
Color centers in diamond are a promising platform for quantum technologies, and understanding their interactions with the environment is crucial for these applications. We report a study of spin- lattice relaxation (T1) of the neutral…
We report spin valve behavior in an organic nanowire consisting of three layers - cobalt, Alq3 and nickel - all nominally 50 nm in diameter. Based on the data, we conclude that the dominant spin relaxation mechanism in Alq3 is the…
A method is presented to calculate the spin relaxation times T1, T2 due to a non-uniform magnetic field, and the linear-in-electric-field precession frequency shift {\delta}{\omega}E when an electric field is present, in the diffusion…
We report a magnetotransport study of spin relaxation in 1.4-21.2 nm epitaxial SrIrO$_3$ thin films coherently strained on SrTiO$_3$ substrates. Fully charge compensated semimetallic transport has been observed in SrIrO$_3$ films thicker…
We investigate the spin relaxation induced by acoustic phonons in the presence of spin-orbit interactions in single electron Si/SiGe lateral coupled quantum dots. The relaxation rates are computed numerically in single and double quantum…
Using a first-principles approach we calculate the acoustic electron-phonon couplings in graphene for the transverse (TA) and longitudinal (LA) acoustic phonons. Analytic forms of the coupling matrix elements valid in the long-wavelength…
The spin-flip (SF) Eliashberg function is calculated from first-principles for ferromagnetic Ni to accurately establish the contribution of Elliott-Yafet electron-phonon SF scattering to Ni's femtosecond laser-driven demagnetization. This…
We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar…
In contrast to the long-known fact that spin-flip hot spots, i.e., special \vc{k}-points on the Fermi surface showing a high spin-mixing parameter, do not occur in the bulk of monovalent (noble and alkali) metals, we found them on the…