Related papers: Two-dimensional non-volatile valley spin valve
Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2.…
The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue…
Exchange bias is a phenomenon critical to solid-state technologies that require spin valves or non-volatile magnetic memory. The phenomenon is usually studied in the context of magnetic interfaces between antiferromagnets and ferromagnets,…
Charge-to-spin and spin-to-charge conversion mechanisms in high spin-orbit materials are the new frontier of memory devices. They operate via spin-orbit torque (SOT) switching of a magnetic electrode, driven by an applied charge current. In…
Abstract The valley degree of freedom in two-dimensional materials provides an opportunity to extend the functionalities of valleytronics devices. Very short valley lifetimes demand the ultrafast control of valley pseudospin. Here, we…
Weyl semimetal Td-phase WTe2 possesses the spin-resolved band structure with strong spin-orbit coupling, holding promises as a useful spin source material. The noncentrosymmetric crystalline structure of Td-WTe2 endows the generation of the…
Two dimensional magnetic materials are at the forefront of the next generation of spintronic devices. The possibility to interface them with other van der Waals materials such as transition metal dichalcogenides has opened new possibilities…
We theoretically investigate the effective exchange interaction, $J_\mathrm{eff}$, mediated by conductive electrons within a nonmagnetic metal spacer, in the presence of a bias voltage, sandwiched by two ferromagnetic insulators. On the…
Device stability is essential for quantum information technologies, where reliable control of electronic states is crucial. Diamond valleytronics offers a promising platform by exploiting the valley degree of freedom to store and manipulate…
Van der Waals (vdW) heterostructures, stacking different two-dimensional materials, have opened up unprecedented opportunities to explore new physics and device concepts. Especially interesting are recently discovered two-dimensional…
We study perfect valley polarization in a molybdenum disulfide MoS2 nanoribbon monolayer using two bands Hamiltonian model and non-equilibrium Green's function method. The device consists of a one-dimensional quantum wire of MoS2 monolayer…
Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferroelectric domains at symmetry-broken interfaces of transition…
We study the electronic waiting time distributions (WTDs) in a non-interacting quantum dot spin valve by varying spin polarization and the noncollinear angle between the magnetizations of the leads using scattering matrix approach. Since…
A monolayer of $MoS_{2}$ has a non-centrosymmetric crystal structure, with spin polarized bands. It is a two valley semiconductor with direct gap falling in the visible range of the electromagnetic spectrum. Its optical properties are of…
We report the detailed study of the influence of the spin and valley splittings on such physical observables of the two-dimensional disordered electron liquid as resistivity, spin and valley susceptibilities. We explain qualitatively the…
Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed Multiferroic Tunnel Junctions (MFTJs), can be achieved not only by the magnetic alignments of two…
Recent theoretical efforts predicted a type of unconventional antiferromagnet characterized by the crystal symmetry C (rotation or mirror), which connects antiferromagnetic sublattices in real space and simultaneously couples spin and…
Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that…
Spin-momentum helical locking is one of the most important properties of the nontrivial topological surface states (TSS) in 3D topological insulators (TI). It underlies the iconic topological protection (suppressing elastic backscattering)…
Ferro-valleytricity, a fundamental phenomenon that manifests spontaneous valley polarization, is generally considered to occur in two-dimensional (2D) materials with out-of-plane magnetization. Here, we propose a mechanism to realize…