Related papers: Efficient spin to charge conversion and spin memor…
Altermagnetic materials, especially RuO$_2$, have recently attracted considerable attention for their unique magnetic properties and energy-efficient spintronic applications. However, recent experimental studies have reported highly…
Spin gapless semiconductors are interesting novel class of materials by embracing both magnetism and semiconducting. Its potential application in future spintronics requires realization in thin film form. In this letter, we report a…
From spin pumping measurements in Ta/Py devices for different thicknesses of Ta, we determine the spin Hall angle to be 0.021 - 0.033 and spin diffusion length to be 8 nm in Ta. We have also studied the effect of changing the properties of…
Reducing energy dissipation while increasing speed in computation and memory is a long-standing challenge for spintronics research. In the last 20 years, femtosecond lasers have emerged as a tool to control the magnetization in specific…
Transition metal dichalcogenides (TMDs) have emerged as a promising class of materials for spintronics, with the aim of promoting efficient spin-charge conversion (SCC) in TMD/ferromagnet (FM)-based devices. The MoTe$_2$ semimetal with…
The spin relaxation induced by the Elliott-Yafet mechanism and the extrinsic spin Hall conductivity due to the skew-scattering are investigated in 5d transition-metal ultrathin films with self-adatom impurities as scatterers. The values of…
The burgeoning fields of spintronics and topological electronics require materials possessing a unique combination of properties: ferromagnetism, metallicity, and chemical stability. SrRuO3 (SRO) stands out as a compelling candidate due to…
The ferrimagnetic inverse spinel NiCo2O4 has attracted extensive research interests for its versatile electrochemical properties, robust magnetic order, high conductivity, and fast spin dynamics, as well as its highly tunable nature due to…
Spin-orbit torques due to interfacial Rashba and spin Hall effects have been widely considered as a potentially more efficient approach than the conventional spin-transfer torque to control the magnetization of ferromagnets. We report a…
We report on the spin-Hall magnetoresistance (SMR) and spin Seebeck effect (SSE) in multiferroic CoCr2O4 (CCO) spinel thin films with Pt contacts. We observe a large enhancement of both signals below the spin-spiral (Ts = 28 K) and the spin…
In its ground state, RuO2 was long thought to be an ordinary metallic paramagnet. Recent neutron and x-ray diffraction revealed that bulk RuO2 is an antiferromagnet (AFM) with TN above 300 K. Furthermore, epitaxial strain induces novel…
Despite the potential advantages of information storage in antiferromagnetically coupled materials, it remains unclear whether one can control the magnetic moment orientation efficiently because of the cancelled magnetic moment. Here, we…
We have characterized phase coherence length, spin orbit scattering length, and the Hall factor in n-type MoS2 2D crystals via weak localization measurements and Hall-effect measurements. Weak localization measurements reveal a phase…
The spin-orbit interaction in a solid couples the spin of an electron to its momentum. This coupling gives rise to mutual conversion between spin and charge currents: the direct and inverse spin Hall effects. The spin Hall effects have been…
Graphene is an excellent material for long distance spin transport but allows little spin manipulation. Transition metal dichalcogenides imprint their strong spin-orbit coupling into graphene via proximity effect, and it has been predicted…
This study reports the magnetization switching induced by spin-orbit torque (SOT) from the spin current generated in Co2MnGa magnetic Weyl semimetal (WSM) thin films. We deposited epitaxial Co2MnGa thin films with highly B2-ordered…
The spin-to-charge current interconversion in bilayers composed of ferromagnetic and nonmagnetic layers with strong spin-orbit coupling has garnered considerable attention due to its exceptional potential in advancing spintronics devices…
We report a giant spin Hall effect (SHE) in {\beta}-W thin films. Using spin torque induced ferromagnetic resonance with a {\beta}-W/CoFeB bilayer microstrip we determine the spin Hall angle to be |\theta|=0.30\pm0.02, large enough for an…
Charge-to-spin and spin-to-charge conversion mechanisms in high spin-orbit materials are the new frontier of memory devices. They operate via spin-orbit torque (SOT) switching of a magnetic electrode, driven by an applied charge current. In…
The (001) surface of SrTiO3 were transformed from insulating to conducting after Ar+ irradiation, producing a quasi two-dimensional electron gas (2DEG). This conducting surface layer can introduce Rashba spin orbital coupling due to the…