Related papers: Spin Relaxation and Diffusion in Monolayer 1T'-WTe…
Understanding substrate effects on spin dynamics and relaxation in two-dimensional (2D) materials is of key importance for spintronics and quantum information applications. However, the key factors that determine the substrate effect on…
We study the optically induced spin polarization, spin dephasing and diffusion in several high-mobility two-dimensional electron systems, which are embedded in GaAs quantum wells grown on (110)-oriented substrates. The experimental…
Using a consistent quantum-mechanical treatment for the electromagnetic radiation, we theoretically investigate the magnetic spin-flip scatterings of a neutral two-level atom trapped in the vicinity of a superconducting body. We derive a…
The spin dynamics and spin relaxation of itinerant electrons in quantum wires with spin-orbit coupling is reviewed. We give an introduction to spin dynamics, and review spin-orbit coupling mechanisms in semiconductors. The spin diffusion…
We study spin relaxation and diffusion in an electron-spin ensemble of nitrogen impurities in diamond at low temperature (0.25-1.2 K) and polarizing magnetic field (80-300 mT). Measurements exploit mode- and temperature-dependent coupling…
Uniaxial compressive strain along the [001] direction strongly suppresses the spin relaxation in silicon. When the strain level is large enough so that electrons are redistributed only in the two valleys along the strain axis, the dominant…
The spin relaxation time of electrons in GaAs and GaN are determined with a model that includes momentum scattering by phonons and ionized impurities, and spin scattering by the Elliot-Yafet, D'yakonov-Perel, and Bir-Aronov-Pikus…
We have investigated spin relaxation times in CdTe quantum dots doped with a single Mn atom, a prototype of a system where the interaction between a single charge carrier and a single spin takes place. A theoretical model that was used…
A spin lifetime anisotropy between in-plane and out-of-plane spins in bilayer graphene (BLG) can be achieved by spin-orbit proximity coupling of graphene to transition metal dichalcogenides. This coupling reduces the in-plane spin lifetime…
The temperature dependence of the spin relaxation time in multilayer graphene (MLG) spin valve devices was measured using a non-local magnetoresistance (NLMR) measurement. A weak localization (WL) was observed from magnetoresistance (MR)…
Spatiotemporal spin dynamics under spin-orbit interaction is investigated in a (001) GaAs two-dimensional electron gas using magneto-optical Kerr rotation microscopy. Spin polarized electrons are diffused away from the excited position,…
We report on time-resolved Kerr rotation measurements of spin coherence of electrons in the first excited subband of a high-mobility low-density two-dimensional electron system in a GaAs/Al0.35Ga0.65As heterostructure. While the transverse…
Finite-temperature local spin dynamics within the random spin-1/2 antiferromagnetic Heisenberg chain is studied numerically. The aim is to explain measured NMR spin-lattice relaxation times in BaCu_{2}(Si_{0.5}Ge_{0.5})_{2}O_{7}, which is…
We present a theory that elucidates the major momentum and spin relaxation processes for electrons, holes and hot excitons in monolayer transition-metal dichalcogenides. We expand on spin flips induced by flexural phonons and show that the…
Spin relaxation and decoherence is at the heart of spintronics and spin-based quantum information science. Currently, theoretical approaches that can accurately predict spin relaxation of general solids including necessary scattering…
We apply the D'yakonov-Perel' (DP) formalism to [111]-grown zincblende quantum wells (QWs) to compute the spin lifetimes of electrons in the two-dimensional electron gas. We account for both bulk and structural inversion asymmetry (Rashba)…
We study the lifetime of the persistent spin helix in semiconductor quantum wells with equal Rashba- and linear Dresselhaus spin-orbit interactions. In order to address the temperature dependence of the relevant spin relaxation mechanisms…
We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar…
Cyclotron spin-flip excitation in a nu=2 quantum Hall system, being separated from the ground state by a slightly smaller gap than the cyclotron energy and from upper magnetoplasma excitation by the Coulomb gap [S. Dickmann and I.V.…
We first report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-Ge contact at room temperature (RT), employing threeterminal Hanle measurements. A sizable spin signal of ~170 k{\Omega} {\mu}m^2 has been…