Related papers: Sub-terahertz field emission transistors with self…
We present the design, fabrication, and characterization of a metamaterial absorber which is resonant at terahertz frequencies. We experimentally demonstrate an absorptivity of 0.97 at 1.6 terahertz. Importantly, this free-standing absorber…
This article focuses on the near-field effect in terahertz (THz) communications and sensing systems. By equipping with extremely large-scale antenna arrays (ELAAs), the near-field region in THz systems can be possibly extended to hundreds…
We study theoretically the dynamical rectification of a terahertz AC electric field, ie. the DC current and voltage response to the incident radiation, in strongly coupled semiconductor superlattices. We address the problem of stability…
Spintronic Terahertz Emitters (STE) represent a significant advancement in source technology, exploiting the ultrafast demagnetization process of spin-electrons to unveil a 30THz wide, gapless spectrum, accessible through femtosecond lasers…
Spintronic terahertz (THz) emitter provides the advantages such as apparently broader spectrum, significantly lower cost, and more flexibility in compared with the commercial THz emitters, and thus attracts great interests recently. In past…
We demonstrate a Terahertz photomixer pumped by mid-infrared photons at 10$\mu$m wavelength. The device is based on a dual-antenna architecture, in which a two-dimensional array of mid-infrared patch-antenna resonators is connected to the…
Two-dimensional semiconductors and their moir\'e superlattices have emerged as important platforms for investigating correlated electrons. However, many key properties of these systems, such as the frequency-dependent conductivity, remain…
III-V tunneling field-effect transistors (TFETs) offer great potentials in future low-power electronics application due to their steep subthreshold slope and large "on" current. Their 3D quantum transport study using non-equilibrium Green's…
Terahertz (THz) imaging has the ability to see through otherwise opaque materials. However, due to the long wavelengths of THz radiation ({\lambda}=300{\mu}m at 1THz), far-field THz imaging techniques are heavily outperformed by optical…
We demonstrate an air-core single-mode hollow waveguide that uses Bragg reflector structures in place of the vertical metal walls of the standard rectangular waveguide or via holes of the so-called substrate integrated waveguide. The…
Superconducting quantum circuits are one of the leading quantum computing platforms. To advance superconducting quantum computing to a point of practical importance, it is critical to identify and address material imperfections that lead to…
The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic…
A full (2$\pi$) phase modulation is critical for efficient wavefront manipulation. In this article, a metasurface based on graphene long/short-strip resonators is used to implement a dynamic 2$\pi$ phase modulation by applying different…
In this work, the transport of tunnel field-effect transistor (TFET) based on vertically stacked hereto-structures from 2D transition metal dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. WTe2-MoS2…
We report on a detailed study of the terahertz (THz) photoresistivity in a strained HgTe three-dimensional topological insulator (3D TI) for all Fermi level positions: inside the conduction and valence bands, and in the bulk gap. In the…
We propose a new energy conversion approach from a dc electric field to a terahertz wave based on hybrid semiconductors by combining two-dimensional (2D) crystalline layers and a thick conducting material with possible applications as a…
The response to external terahertz (THz) irradiation from the silicon carbide nanostructures prepared by the method of substitution of atoms on silicon is investigated. The kinetic dependence of the longitudinal voltage is recorded at room…
Achieving terabit-per-second (Tbps) data rates in terahertz (THz)-band communications requires bridging the complexity gap in baseband transceiver design. This work addresses the signal processing challenges associated with data detection…
It is well known that performance of a thermophotovoltaic (TPV) device can be enhanced if the vacuum gap between the thermal emitter and the TPV cell becomes nanoscale due to the photon tunneling of evanescent waves. Having multiple…
Self-heating in surrounding gate transistors can degrade its on-current performance and reduce lifetime. If a transistor heats/cools with time-constants less than the inverse of the operating frequency, a predictable, frequency-independent…