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Starting from the rigorous quantum-field-theory formalism we derive a formula for the screened conductivity designed to study the coupling of light with elementary electron excitations and the ensuing electromagnatic modes in…

Materials Science · Physics 2021-09-22 Dino Novko , Keenan Lyon , Duncan J. Mowbray , Vito Despoja

Double Deeply Virtual Compton Scattering (DDVCS) is the only experimental channel for the determination of the dependence of the Generalized Parton Distributions (GPDs) on both the average and the transferred momentum independently. The…

Nuclear Experiment · Physics 2021-12-20 S. Zhao , A. Camsonne , D. Marchand , M. Mazouz , N. Sparveris , S. Stepanyan , E. Voutier , Z. W. Zhao

Relativistic quantum theory of induced scattering of 2D Dirac particles by electrostatic field of impurity ion (in the Born approximation) in the doped graphene at the presence of an external electromagnetic radiation field (actually…

Optics · Physics 2017-11-22 A. K. Avetissian , A. G. Ghazaryan , Kh. V. Sedrakian , B. R. Avchyan

Self-correction is an effective technique for maintaining parallel sampling in discrete diffusion models with minimal performance degradation. Prior work has explored self-correction at inference time or during post-training; however, such…

Machine Learning · Computer Science 2026-03-04 Linxuan Wang , Ziyi Wang , Yikun Bai , Wei Deng , Guang Lin , Qifan Song

Paper is an ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems. When combined with nanomaterials, it can be harnessed for various Internet-of-Things applications, ranging from…

Applied Physics · Physics 2023-11-30 S. Malik , Y. Zhao , Y. He , X. Zhao , H. Li , L. G. Occhipinti , M. Wang , S. Akhavan

Doping to induce suitable impurity levels is an effective strategy to achieve highly efficient photocatalytic overall water splitting (POWS). However, to predict the position of impurity levels, it is not enough to only depend on the…

Materials Science · Physics 2023-08-24 Dazhong Sun , Wentao Li , Anqi Shi , Wenxia Zhang , Huabing Shu , Fengfeng Chi , Bing Wang , Xiuyun Zhang , Xianghong Niu

We present the concept and experimental realization of polarization-induced bulk electron doping in III-V nitride semiconductors. By exploiting the large polarization charges in the III-V nitrides, we are able to create wide slabs of high…

The electrochemical doping transformation in organic semiconductor devices is studied in application to light-emitting cells. It is shown that the device performance can be significantly improved by utilizing new fundamental properties of…

Materials Science · Physics 2012-09-14 V. Bychkov , P. Matyba , V. Akkerman , M. Modestov , D. Valiev , G. Brodin , C. K. Law , M. Marklund , L. Edman

The dielectric environment surrounding semiconductors plays a crucial role in determining device performance, a role that becomes especially pronounced in atomically thin semiconductors where charge carriers are confined within a few atomic…

We develop a theory for the maximum achievable mobility in modulation-doped 2D GaAs-AlGaAs semiconductor structures by considering the momentum scattering of the 2D carriers by the remote ionized dopants which must invariably be present in…

Mesoscale and Nanoscale Physics · Physics 2015-05-08 S. Das Sarma , E. H. Hwang , S. Kodiyalam , L. N. Pfeiffer , K. W. West

Superconducting layered transition metal dichalcogenides (TMDs) stand out among other superconductors due to the tunable nature of the superconducting transition, coexistence with other collective electronic excitations (charge density…

Transition metal dichalcogenides (TMDs) are van der Waals layered materials with sizable and tunable bandgaps, offering promising platforms for two-dimensional electronics and optoelectronics. To this end, the bottleneck is how to acquire…

Materials Science · Physics 2020-10-13 Hao Li , Junku Liu , Nan Guo , Lin Xiao , Haoxiong Zhang , Shuyun Zhou , Yang Wu , Shoushan Fan

The physics of doping a Mott insulator is investigated in the presence of a solid-vacuum interface. Using the embedding approach for dynamical mean field theory we show that the change in surface spectral evolution in a doped Mott insulator…

Strongly Correlated Electrons · Physics 2011-07-12 Reza Nourafkan , Frank Marsiglio

We study the interplay between charge doping and intermolecular distance in the polymerization of C60 fullerene chains by means of density functional theory (DFT)-based first principle calculations. The potential energy surface analysis…

Chemical Physics · Physics 2015-03-19 Roberta Poloni , Alfonso San Miguel , Maria Victoria Fernandez-Serra

New generation Indium based lead-free Cs2InAgCl6 is a promising halide material in photovoltaic applications due to its good air stability and non-toxic behavior. But its wide band gap (>3 eV) is not suitable for solar spectrum and hence…

Materials Science · Physics 2022-05-10 K. C. Bhamu , Enamul Haque , C. S. Praveen , Nandha Kumar , G. Yumnam , M. Anwar Hossain , Gautam Sharma

Since lattice strain and charge density affect various material properties of graphene, a reliable and efficient method is required for quantification of the two variables. While Raman spectroscopy is sensitive and non-destructive, its…

Mesoscale and Nanoscale Physics · Physics 2020-08-10 Gwanghyen Ahn , Sunmin Ryu

Within the framework of the kinetic energy driven superconducting mechanism, the effect of the extended impurity scatterers on the quasiparticle transport of cuprate superconductors in the superconducting state is studied based on the nodal…

Superconductivity · Physics 2008-07-20 Zhi Wang , Huaiming Guo , Shiping Feng

Integrating two-dimensional semiconductors such as MoS$_2$ with dielectric materials remains a central challenge for their use in future logic technologies. While seed layers are typically introduced to promote dielectric nucleation and…

The surface conductivity of hydrogen-terminated diamond is a topic of great interest from both scientific and technological perspectives. This is primarily due to the fact that the conductivity is exceptionally high without the need for…

We investigate theoretically 2D electronic transport in Si:P $\delta$-doped layers limited by charged-dopant scattering. Since the carrier density is approximately equal to the dopant impurity density, the density dependent transport shows…

Mesoscale and Nanoscale Physics · Physics 2013-03-21 E. H. Hwang , S. Das Sarma