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Strain engineering is an efficient tool to tune and tailor the electrical and optical properties of 2D materials. The built-in strain can be tuned during the synthesis process of a two dimensional semiconductor, as molybdenum disulfide, by…

Controllable quasiparticle radiation in two-dimensional (2D) semiconductors is essential for efficient carrier recombination, tunable emission, and modulation of valley polarization which are strongly determined by both the density and…

Mesoscale and Nanoscale Physics · Physics 2025-12-30 Debasish Biswasray , Yogendra Singh , Amar Jyoti Biswal , Bala Murali Krishna Mariserla

We have performed a comprehensive first-principles study of the electronic and magnetic properties of two-dimensional (2D) transition-metal dichalcogenide (TMD) heterobilayers MX2/MoS2 (M = Mo, Cr, W, Fe, V; X = S, Se). For M = Mo, Cr, W;…

Mesoscale and Nanoscale Physics · Physics 2014-03-05 Ning Lu , Hongyan Guo , Lei Li , Jun Dai , Lu Wang , Wai-Ning Mei , Xiaojun Wu , Xiao Cheng Zeng

Monolayers and multilayers of semiconducting transition metal dichalcogenides (TMDCs) offer an ideal platform to explore valley-selective physics with promising applications in valleytronics and information processing. Here we manipulate…

We theoretically investigate the binding energy and electron-hole (e-h) overlap of excitonic states confined at the interface between two-dimensional materials with type-II band alignment, i.e., with lowest conduction and highest valence…

Mesoscale and Nanoscale Physics · Physics 2025-11-20 Igor L. C. Lima , M. V. Milošević , F. M. Peeters , Andrey Chaves

Nanomaterials are prone to influence by chemical adsorption because of their large surface to volume ratios. This enables sensitive detection of adsorbed chemical species which, in turn, can tune the property of the host material. Recent…

Materials Science · Physics 2015-06-18 Liangzhi Kou , Aijun Du , Changfeng Chen , Thomas Frauenheim

In monolayers of semiconducting transition metal dichalcogenides, the light helicity ($\sigma^+$ or $\sigma^-$) is locked to the valley degree of freedom, leading to the possibility of optical initialization of distinct valley populations.…

Mesoscale and Nanoscale Physics · Physics 2016-05-25 T. Smoleński , M. Goryca , M. Koperski , C. Faugeras , T. Kazimierczuk , K. Nogajewski , P. Kossacki , M. Potemski

In semiconductor physics, many essential optoelectronic material parameters can be experimentally revealed via optical spectroscopy in sufficiently large magnetic fields. For monolayer transition-metal dichalcogenide semiconductors, this…

Mesoscale and Nanoscale Physics · Physics 2020-08-20 M. Goryca , J. Li , A. V. Stier , T. Taniguchi , K. Watanabe , E. Courtade , S. Shree , C. Robert , B. Urbaszek , X. Marie , S. A. Crooker

Two-dimensional (2D) materials with giant nonlinear optical (NLO) responses are essential for the development of advanced on-chip NLO devices. Using first-principles calculations, we predict a remarkable strain-induced enhancement of…

Materials Science · Physics 2025-01-29 Zhefeng Lou , Zhihao Gong , Ziye Zhu , Wenbin Li , Xiao Lin , Hua Wang

Monolayer transition metal dichalcogenides have emerged as promising materials for optoelectronic and nanophotonic devices. However, the low photoluminescence (PL) quantum yield (QY) hinders their various potential applications. Here we…

By performing density functional theory-based ab-initio calculations, Raman active phonon modes of novel single-layer two-dimensional (2D) materials and the effect of in-plane biaxial strain on the peak frequencies and corresponding…

Mesoscale and Nanoscale Physics · Physics 2018-04-04 M. Yagmurcukardes , C. Bacaksiz , E. Unsal , B. Akbali , R. T. Senger , H. Sahin

Heterostructures made from 2D transition-metal dichalcogenides are known as ideal platforms to explore excitonic phenomena ranging from correlated moir\'e excitons to degenerate interlayer exciton ensembles. So far, it is assumed that the…

We use micro-Raman and photoluminescence (PL) spectroscopy at 300K to investigate the influence of uniaxial tensile strain on the vibrational and optoelectronic properties of monolayer and bilayer MoS2 on a flexible substrate. The initially…

Mesoscale and Nanoscale Physics · Physics 2013-09-11 G. Wang , C. R. Zhu , B. L. Liu , X. Marie , Q. X. Feng , X. X. Wu , H. Fan , P. H. Tan , T. Amand , B. Urbaszek

Local strain engineering is a promising technique to tune the properties of two-dimensional materials at the nanoscale. However, many existing methods are static and limit the systematic exploration of strain-dependent material behavior.…

Materials Science · Physics 2025-07-11 Eric Herrmann , Zhixiang Huang , Sai Rahul Sitaram , Ke Ma , S M Jahadun Nobi , Xi Wang

We report lasing of moir\'e trapped interlayer excitons (IXs) by integrating a pristine hBN-encapsulated MoSe$_2$/WSe$_2$ heterobilayer into a high-$Q$ ($>10^4$) nanophotonic cavity. We control the cavity-IX detuning using a magnetic field…

Understanding interfacial interactions in two-dimensional (2D) heterostructures is essential for advancing optoelectronic and quantum technologies. We investigate metal-organic chemical vapor deposition (MOCVD)-grown WSe$_2$ films (one to…

Nonlinear optics in whispering-gallery-mode (WGM) microresonators have attracted much attention. Owing to strong confinement of the light in a small volume, a WGM microresonator can dramatically boost the strength of light field, giving…

We present ab initio calculations on the effect of in-plane equi-biaxial strain on the structural and electronic properties of hypothetical graphene-like GaN monolayer (ML-GaN). It was found that ML-GaN got buckled for compressive strain in…

Materials Science · Physics 2015-04-28 Harihar Behera , Gautam Mukhopadhyay

The results of magneto-optical spectroscopy investigations of excitons in a CVD grown monolayer of WSe2 encapsulated in hexagonal boron nitride are presented. The emission linewidth for the 1s state is of 4:7 meV, close to the narrowest…

Mesoscale and Nanoscale Physics · Physics 2019-07-24 A. Delhomme , G. Butseraen , B. Zheng , L. Marty , V. Bouchiat , M. R. Molas , A. Pan , K. Watanabe , T. Taniguchi , A. Ouerghi , J. Renard , C. Faugeras

Monolayer transition-metal dichalcogenides are direct gap semiconductors with great promise for optoelectronic devices. Although spatial correlation of electrons and holes plays a key role, there is little experimental information on such…

Materials Science · Physics 2015-06-23 A. T. Hanbicki , M. Currie , G. Kioseoglou , A. L. Friedman , B. T. Jonker