Related papers: Strain engineering in Ge/GeSi spin qubits heterost…
Hole spin qubits are frontrunner platforms for scalable quantum computers, but state-of-the-art devices suffer from noise originating from the hyperfine interactions with nuclear defects. We show that these interactions have a highly…
Epitaxial strain provides a powerful, non-chemical route to tune the properties of functional materials by manipulating the coupling between spin, charge, and lattice degrees of freedom. Using density functional theory (DFT) calculations…
We study the g-factor of discrete electron states in InAs nanowire based quantum dots. The g values are determined from the magnetic field splitting of the zero bias anomaly due to the spin 1/2-Kondo effect. Unlike to previous studies based…
The $\bf{g}$ tensor, which determines the reaction of Kramers-degenerate states to an applied magnetic field, is of increasing importance in the current design of spin qubits. It is affected by details of heterostructure composition,…
Strain engineering enables quantum confinement in pristine graphene without degrading its intrinsic mobility and spin coherence. Here, we extend previously proposed strain-induced charge-qubit architectures by incorporating spin degrees of…
We study quantum interference effects of a qubit whose energy levels are continuously modulated. The qubit is formed by an impurity electron spin in a silicon tunneling field-effect transistor, and it is read out by spin blockade in a…
Qubits encoded in the spin state of heavy holes confined in Si- and Ge-based semiconductor quantum dots are currently leading the efforts toward spin-based quantum information processing. The virtual absence of spinful nuclei in purified…
We theoretically investigate the properties of holes in a Si$_{x}$Ge$_{1-x}$/Ge/ Si$_{x}$Ge$_{1-x}$ quantum well in a perpendicular magnetic field that make them advantageous as qubits, including a large ($>$100~meV) intrinsic splitting…
An odd number of zigzag edges in armchair graphene nanoribbons and their mechanical properties (e.g., Young's modulus, Poisson ratio and shear modulus) have potential interest for bandgap engineering in graphene based optoelectronic…
In two-dimensional nearly commensurate heterostructures, strain plays a critical role in shaping electronic behavior. While previous studies have focused on random strain introduced during fabrication, achieving controlled structural design…
We present calculations of the g factors for the lower conductance steps of 3D hole quantum wires. Our results prove that the anisotropy with magnetic field orientation, relative to the wire, originates in the Rashba spin-orbit coupling. We…
Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the…
There are a number of theoretical proposals based on strain engineering of graphene and other two-dimensional materials, however purely mechanical control of strain fields in these systems has remained a major challenge. The two approaches…
We prepared Ga0.95Mn0.05As films on top of periodic arrays of InAs quantum dots. X-ray diffraction reveals periodically strained films, commensurate to substrate's patterning. The dots produce a tensile strain in GaMnAs while between the…
We report on the modification of the g-factor by an in-plane electric field in an In$_{0.031}$Ga$_{0.969}$As epilayer. We performed external magnetic field scans of the Kerr rotation of the InGaAs film in order to independently determine…
Few-layer GaSe is one of the latest additions to the family of 2D semiconducting crystals whose properties under strain are still relatively unexplored. Here, we study rippled nanosheets that exhibit a periodic compressive and tensile…
Among many remarkable qualities of graphene, its electronic properties attract particular interest due to a massless chiral character of charge carriers, which leads to such unusual phenomena as metallic conductivity in the limit of no…
In zero magnetic field, conductance measurements of clean one-dimensional (1D) constrictions defined in GaAs/AlGaAs heterostructures show twenty-six quantized ballistic plateaux, as well as a structure close to $0.7(2e^2/h)$. In an in-plane…
Proximity effects are one of the pillars of exotic phenomena and technological applications of two dimensional materials. However, the interactions nature depends strongly on the materials involved, their crystalline symmetries, and…
Strain engineering enables precise, energy-efficient control of nanoscale magnetism. However, unlike well-studied strain-dislocation interactions in mechanical deformation, the spatial evolution of strain-induced spin rearrangement remains…