Related papers: SCART: Predicting STT-RAM Cache Retention Times Us…

We propose a dynamic computational time model to accelerate the average processing time for recurrent visual attention (RAM). Rather than attention with a fixed number of steps for each input image, the model learns to decide when to stop…

In this paper, we present a novel cache design based on Multi-Level Cell Spin-Transfer Torque RAM (MLC STTRAM) that can dynamically adapt the set capacity and associativity to use efficiently the full potential of MLC STTRAM. We exploit the…

The memory capacity in edge devices is often limited due to constraints on cost, size, and power. Consequently, memory competition leads to inevitable page swapping in memory-constrained mixed-criticality edge devices, causing slow storage…

Spin Transfer Torque Random Access Memory (STT-RAM) is an emerging Non-Volatile Memory (NVM) technology that has garnered attention to overcome the drawbacks of conventional CMOS-based technologies. However, such technologies must be…

Spin-Transfer Torque Magnetic RAM (STT-MRAM) is known as the most promising replacement for SRAM technology in large Last-Level Caches (LLCs). Despite its high-density, non-volatility, near-zero leakage power, and immunity to radiation as…

Electrical static random memory (E-SRAM) is the current standard for internal static memory in Field Programmable Gate Array (FPGA). Despite the dramatic improvement in E-SRAM technology over the past decade, the goal of ultra-fast,…

As technology process node scales down, on-chip SRAM caches lose their efficiency because of their low scalability, high leakage power, and increasing rate of soft errors. Among emerging memory technologies, Spin-Transfer Torque Magnetic…

Predicting road traffic speed is a challenging task due to different types of roads, abrupt speed change and spatial dependencies between roads; it requires the modeling of dynamically changing spatial dependencies among roads and temporal…

We propose a novel approach to reduce memory consumption of the backpropagation through time (BPTT) algorithm when training recurrent neural networks (RNNs). Our approach uses dynamic programming to balance a trade-off between caching of…

Storage Class Memory (SCM) is a class of memory technology which has recently become viable for use. Their namearises from the fact that they exhibit non-volatility of data, similar to secondary storage while also having latencies…

This paper summarizes the idea of Adaptive-Latency DRAM (AL-DRAM), which was published in HPCA 2015, and examines the work's significance and future potential. AL-DRAM is a mechanism that optimizes DRAM latency based on the DRAM module and…

Non-volatile memory (NVM) technologies such as spin-transfer torque magnetic random access memory (STT-MRAM) and spin-orbit torque magnetic random access memory (SOT-MRAM) have significant advantages compared to conventional SRAM due to…

In recent years, researchers have explored use of non-volatile devices such as STT-RAM (spin torque transfer RAM) for designing on-chip caches, since they provide high density and consume low leakage power. A common limitation of all…

In-memory computing (IMC) offloads parts of the computations to memory to fulfill the performance and energy demands of applications such as neuromorphic computing, machine learning, and image processing. Fortunately, the main features that…

As one of the most promising emerging non-volatile memory (NVM) technologies, spin-transfer torque magnetic random access memory (STT-MRAM) has attracted significant research attention due to several features such as high density, zero…

Attention mechanisms and non-local mean operations in general are key ingredients in many state-of-the-art deep learning techniques. In particular, the Transformer model based on multi-head self-attention has recently achieved great success…

Due to its high density and close-to-SRAM read latency, spin transfer torque RAM (STT-RAM) is considered one of the most-promising emerging memory technologies for designing large last level caches (LLCs). However, in deep sub-micron…

Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory applications. In this paper, for the first time, we propose a…

Spiking Neural Networks (SNNs) are promising energy-efficient models for neuromorphic computing. For training the non-differentiable SNN models, the backpropagation through time (BPTT) with surrogate gradients (SG) method has achieved high…

As an emerging post-CMOS Field Effect Transistor, Magneto-Electric FETs (MEFETs) offer compelling design characteristics for logic and memory applications, such as high-speed switching, low power consumption, and non-volatility. In this…