Related papers: Using Light to Polarize and Detect Electron Spins …
Spin-polarized electron beam sources enable studies of spin-dependent electric and magnetic effects at the nanoscale. We propose a method of creating spin-polarized electrons on an integrated photonics chip by laser driven nanophotonic…
We investigate polarization observables in hyperon-nucleon scattering by decomposing scattering amplitudes into spin-space tensors, where each component describes scattering by corresponding spin-dependent interactions, so that…
A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin…
The studies of spin phenomena in semiconductor low dimensional systems have grown into the rapidly developing area of the condensed matter physics: spintronics. The most urgent problems in this area, both fundamental and applied, are the…
Color centers in silicon are emerging as promising platforms for quantum technologies. Among them, the G center has attracted considerable interest owing to its bright telecom O-band single-photon emission and its optically addressable…
A novel method invented to measure the minute thermodynamic spin magnetization of dilute two dimensional fermions is applied to electrons in a silicon inversion layer. Interplay between the ferromagnetic interaction and disorder enhances…
We study all of the leading-order contributions to spin relaxation of \textit{conduction} electrons in silicon due to the electron-phonon interaction. Using group theory, $k\cdot p$ perturbation method and rigid-ion model, we derive an…
A novel spin polarization separation of reflected light is observed, when a linearly polarized Gaussian beam impinges on an air-glass interface at Brewster angle. In the far-field zone, spins of photons are oppositely polarized in two…
The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to…
Due to the spin-orbital coupling in a semiconductor quantum dot, a freely precessing electron spin produces a time-dependent charge density. This creates a sizeable electric field outside the dot, leading to promising applications in…
Silicon indirect bandgap fundamentally limits its ability to emit light, hindering the development of silicon-based light sources. Here, we explore a conceptually new solution to this long-standing challenge. We demonstrate ultrabroadband…
In a number of papers an attractive method of laser polarization of electrons (positrons) at storage rings or linear colliders has been proposed. We show that these suggestions are incorrect and based on errors in simulation of multiple…
In CuCl bulk crystal negatively charged excitons (trions $X^-$) can be induced by the resonant optical excitation of extra electrons in conduction band minimum. In the case of light polarization and due to the top valence band structure of…
The direct manipulation of individual atoms in materials using scanning probe microscopy has been a seminal achievement of nanotechnology. Recent advances in imaging resolution and sample stability have made scanning transmission electron…
In this work, we discuss the connections between pseudo spin, real spin of electrons in material and spin polarization of photo-emitted electrons out of material. By investigating these three spin textures for Bi$_2$Se$_3$ and SmB$_6$…
The effect of a uniaxial strain on the optical spin orientation of a cubic semiconductor is investigated by calculating the valence wavefunctions, the optical oscillator strengths and the initial electron spin polarization for near resonant…
The backscattering of laser radiation by a relativistic electron beam is a widely used method for measuring the spin polarization of electrons. We consider again the properties of the scattering process paying special attention to recoil…
Optical orientation has been proven as a powerful tool to inject spin-polarized electron and hole populations in III-V and group-IV semiconductors. In particular, the absorption of circularly-polarized light in bulk Ge generates a…
The unique optical properties of graphene, with broadband absorption and ultrafast response, make it a critical component of optoelectronic and spintronic devices. Using time-resolved momentum microscopy with high data rate and high dynamic…
We optically probe and electrically control a single artificial molecule containing a well defined number of electrons. Charge and spin dependent inter-dot quantum couplings are probed optically by adding a single electron-hole pair and…