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High-spatial-resolution secondary ion mass spectrometry offers a method for mapping lithium at nanoscale lateral resolution. Practical implementation of this technique offers significant potential for revealing the distribution of Li in…
Hexagonal Si2Te2 monolayers (ML-Si2Te2) were predicted to show strain-dependent band-crossover between semiconducting and room-temperature quantum spin Hall phases. However, investigations on this artificial two-dimensional (2D) material…
To prepare for identifying the composition of nanowire-fiber mixtures in Scanning Electron Microscope (SEM) images, we optimize the performance of image classification between nanowires, fibers and tips due to their geometric similarities.…
Hybrid beamforming is widely recognized as an important technique for millimeter wave (mmWave) multiple input multiple output (MIMO) systems. Generalized spatial modulation (GSM) is further introduced to improve the spectrum efficiency.…
The nature of the interface in lateral heterostructures of 2D monolayer semiconductors including its composition, size, and heterogeneity critically impacts the functionalities it engenders on the 2D system for next-generation…
To improve the efficiency of scarce radio-frequency (RF) resources in next-generation wireless systems, an intelligent transceiver architecture based on stacked intelligent metasurfaces (SIM) has recently emerged, where multiple…
The tetradymite compound BiSbTeSe$_2$, is one of the most bulk-insulating three-dimensional topological insulators, which makes it important in the topological insulator research. It is a member of the solid-solution system…
Self-consistent computations of the potential profile in complex semiconductor heterostructures can be successfully applied for comprehensive simulation of the gain and the absorption spectra, for the analysis of the capture, escape,…
Stacked intelligent metasurfaces (SIMs) have recently emerged as a key enabler for realizing electromagnetic wave-domain signal processing in next-generation wireless networks. However, practical SIM implementations often suffer from…
Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI…
A near-field wideband beamforming scheme is investigated for reconfigurable intelligent surface (RIS) assisted multiple-input multiple-output (MIMO) systems, in which a deep learning-based end-to-end (E2E) optimization framework is proposed…
Atomic monolayers represent a novel class of materials to study localized and free excitons in two dimensions and to engineer optoelectronic devices based on their significant optical response. Here, we investigate the role of the substrate…
Tin telluride (SnTe) is an IV-VI semiconductor with a topological crystalline insulator band structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its many applications, there has been little work focused on…
Moire patterns in van der Waals bilayer materials complicate the analysis of atomic-resolution images, hindering the atomic-scale insight typically attainable with scanning transmission electron microscopy. Here, we report a method to…
The Silicon Electron Multiplier (SiEM) is a novel sensor concept for minimum ionizing particle (MIP) detection which uses internal gain and fine pitch to achieve excellent temporal and spatial resolution. In contrast to sensors where the…
Stacked intelligent metasurfaces (SIMs) have recently emerged as an effective solution for next-generation wireless networks. A SIM comprises multiple metasurface layers that enable signal processing directly in the wave domain. Moreover,…
Charge or spin-qubits can be realized by using gate-defined quantum dots (QDs) in semiconductors in a similar fashion to the processes used in CMOS for conventional field-effect transistors or more recent fin FET technology. However, to…
In light of the rise of transition metal dichalcogenides as 2D semiconductors for device applications, band engineering becomes very important from an application point of view. In many of these materials, such as the canonical example of…
Aiming to measure the difference in arrival times of two coincident gamma-photons with an accuracy in the order of 200 ps, time-of-flight positron emission tomography systems commonly employ silicon photomultipliers (SiPMs) and…
Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of…