Related papers: Optimizing ToF-SIMS Depth Profiles of Semiconducto…

We report results of high-resolution TOF SIMS (time of flight secondary ion mass spectrometry) depth profiling experiments on a nanolayered structure, a stack of 16 alternating MgO and ZnO ~5.5 nm layers grown on a Si substrate by atomic…

Quantification of Ge in Si1-xGex structures (0.092<x<0.78) was carried by time-of-flight secondary ion mass spectrometry (TOF-SIMS) and electron-gas secondary neutral mass spectrometry (SNMS). A good linear correlation (R2>0.9997) of…

In this communication, we report results of a high resolution sputter depth profiling analysis of a stack of 16 alternating MgO and ZnO nanolayers grown by atomic layer deposition (ALD) with thickness of ~5.5 nm per layer. We used an…

Plasma profiling time of flight mass spectrometry (PP-TOFMS) has recently gained interest, as it enables the elemental profiling of semiconductor structures with high depth resolution in short acquisition times. As recently shown by Tempez…

Developing tailored semiconductor heterostructures on demand represents a critical capability for addressing the escalating performance demands in electronic and optoelectronic devices. However, traditional fabrication methods remain…

We explore the potential of Time-Of-Flight Medium Energy Ion Scattering (TOFMEIS) for thin film analysis and analyze possible difficulties in evaluation of experimental spectra. Issues regarding different combinations of composition and…

Time of flight backscattering spectrometry (ToF-BS) was successfully implemented in a helium ion microscope (HIM). Its integration introduces the ability to perform laterally resolved elemental analysis as well as elemental depth profiling…

Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despite recent advances enabling multiqubit designs that…

Intelligent metasurfaces may be harnessed for realizing efficient holographic multiple-input and multiple-output (MIMO) systems, at a low hardware-cost and high energy-efficiency. As part of this family, we propose a hybrid beamforming…

Stacked intelligent metasurfaces (SIMs), which integrate multiple programmable metasurface layers, have recently emerged as a promising technology for advanced wave-domain signal processing. SIMs benefit from flexible spatial…

We present a guide for the design and fabrication of a CMOS-compatible metamaterial microstructure as an absorber of visible light with exceptionally high absorption efficiency (~ 98%), for wavelengths 400nm-700nm. The structural parameters…

Nanoscale fabrication and characterisation techniques critically underpin a vast range of fields, including materials science, nanoelectronics and nanobiotechnology. Focused ion beam (FIB) techniques are particularly appealing due to their…

Atomic force microscopy (AFM) is a well-known tool for studying surface roughness and to collect depth information about features on the top atomic layer of samples. By combining secondary ion mass spectroscopy (SIMS) with focused ion beam…

Germanium (Ge) quantum wells are emerging as versatile platforms for quantum devices, supporting high-quality spin qubits and integration with superconducting leads. These applications benefit from strong intrinsic spin-orbit interaction…

Secondary-ion Mass Spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium containing nitride semiconductor multilayer heterostructures: ScxGa1-xN/GaN and ScxAl1-xN/AlN grown by molecular beam…

Topological insulators (TIs) are a class of materials characterized by an insulting bulk and high mobility topologically protected surface states, making them promising candidates for future optoelectronic and quantum devices. Although…

New developments in quantitative sputter depth profiling during the past ten years are reviewed, with special emphasis on the experimental achievement of ultrahigh depth resolution (below 2 nm for sputtered depths larger than 10 nm). In…

This work reports an original method for the fabrication of Metal-Isulator-Semiconductor (MIS) structures with silicon nanocrystals (Si NCs) based active layers embedded in the insulating SiO 2 oxide, for high performance solar cell and…

Orientation and three-dimensional structure of immobilized proteins on bio-devices are very important to assure their high performance. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is able to analyze upper surface of one layer…

We report on fabrication of a two-dimensional topological insulator-Bi(111) bilayer on Sb nanofilms via a sequential molecular beam epitaxy (MBE) growth technique. Our angle-resolved photoemission measurements demonstrate the evolution of…