Related papers: Magnetoelectric phase control at domain-wall-like …
The dynamics of a multiferroic domain wall in which an electric field can couple to the magnetization via inhomogeneous magnetoelectric interaction is investigated by the collective-coordinate framework. We show how the electric field is…
In this study, we explore the ferroelectric domain structure and mechanical properties of PbTiO$_3$-based membranes, which develops a well-ordered and crystallographic-oriented ripple pattern upon release from their growth substrate. The…
Ferroelectric domain wall devices offer a promising route to low-voltage, reconfigurable nanoelectronics by confining currents to nanoscale conducting interfaces within an insulating bulk. However, the potential for resistive heating and…
Much of the dramatic growth in research on topological materials has focused on topologically protected surface states. While the domain walls of topological materials such as Weyl semimetals with broken inversion or time-reversal symmetry…
Antiferromagnets offer remarkable promise for future spintronics devices, where antiferromagnetic order is exploited to encode information. The control and understanding of antiferromagnetic domain walls (DWs) - the interfaces between…
Difference in density of states for the spin's majority and minority bands in a ferromagnet changes the electrostatic potential along the domains, introducing the discontinuities of the potential at domain boundaries. The value of…
In polar oxide interfaces phenomena such as conductivity, superconductivity, magnetism, one-dimensional conductivity and Quantum Hall states can emerge at the polar discontinuity. Combining controllable ferroelectricity at such interfaces…
We report electrically switchable polarization and ferroelectric domain scaling over a thickness range of 5-100 nm in BiFeO3 films deposited on [110] vicinal substrates. The BiFeO3 films of variable thickness were deposited with SrRuO3…
When electric and magnetic fields are applied together on a magnetoelectric antiferromagnet, the domain state is subject to reversal. Although the initial and final conditions are saturated single-domain states, the process of reversal may…
We report on the evolution of ferromagnetic domain walls during magnetization reversal in elastically coupled ferromagnetic-ferroelectric heterostructures. Using optical polarization microscopy and micromagnetic simulations, we demonstrate…
Freestanding BaTiO3 nanodots exhibit domain structures characterized by distinct quadrants of ferroelastic 90{\deg} domains in transmission electron microscopy (TEM) observations. These differ significantly from flux-closure domain patterns…
Phase-field simulations of domain walls between antiparallel ferroelectric domains in BaTiO3 - SrTiO3 crystalline superlattices suggest that a paraelectric layer with a thickness comparable to the thickness of the domain wall itself can act…
A promising mechanism for achieving colossal dielectric constants is to use insulating internal barrier layers, which typically form during synthesis and then remain in the material. It has recently been shown that insulating domain walls…
Domains and domain walls are among the key factors that determine the performance of ferroelectric materials. In recent years, a unique type of domain walls, i.e., the sawtooth-shaped domain walls, has been observed in BiFeO$_{3}$ and…
We study ferroelectric domain walls in barium titanate. We search for structurally nontrivial, so-called non-Ising domain walls, where the Polarisation is non-zero along the entire wall. Our approach enables us to find solutions for domain…
Hexagonal manganese oxides RMnO$_3$ show intriguing topological ferroelectric-domain walls with variable conductivity, leading to domain wall engineering. Despite the numerous experimental studies on the polar nanoscale structures,…
The functionality of magnetoelectric multiferroics depends on the formation, size, and coupling of their magnetic and electric domains. Knowing the parameters guiding these criteria is a key effort in the emerging field of magnetoelectric…
Ferroelectric switching and nanoscale domain dynamics were investigated using atomic force microscopy on monocrystalline Pb(Zr0.2Ti0.8)O3 thin films. Measurements of domain size versus writing time reveal a two-step domain growth mechanism,…
Ferroelectrics are technologically important, with wide application in micromechanical systems, nonlinear optics, and information storage. Recent discoveries of exotic polarisation textures in these materials, which can strongly influence…
Ferroelectric polarization switching underpins the functional performance of a wide range of materials and devices, yet its dependence on complex local microstructural features renders systematic exploration by manual or grid-based…