Related papers: Demonstrating sub-electron noise performance in Si…
We calculate the charge sensitivity of a recently demonstrated device where the Josephson inductance of a single Cooper-pair transistor is measured. We find that the intrinsic limit to detector performance is set by oscillator quantum…
Detectors at future high energy colliders will face enormous technical challenges. Disentangling the unprecedented numbers of particles expected in each event will require highly granular silicon pixel detectors with billions of readout…
The PICOSEC detection concept consists in a "two-stage" Micromegas detector coupled to a Cherenkov radiator and equipped with a photocathode. A proof of concept has already been tested: a single-photoelectron response of 76 ps has been…
Cadmium zinc telluride (CdZnTe, CZT) radiation detectors are suitable for a variety of applications, due to their high spatial resolution and spectroscopic energy performance at room temperature. However, state-of-the-art detector systems…
We show that the sensitivity of antenna-coupled field-effect transistors (FETs) to terahertz (THz) radiation improves continuously with decreasing temperature. The noise-equivalent power (NEP) of 540 GHz patch-antenna-coupled FETs decreases…
We present the design and characterization of the first full chain precision timing prototype ASIC, named ETL Readout Chip version 1 (ETROC1) for the CMS MTD endcap timing layer (ETL) upgrade. The ETL utilizes Low Gain Avalanche Diode…
Highly sensitive photodetectors with single photon level detection is one of the key components to a range of emerging technologies, in particular the ever-growing field of optical communication, remote sensing, and quantum computing.…
This paper presents a novel pixel chip readout scheme: the Region-of-Interest Readout Circuit (ROIRC), which is designed for large area, large array pixel chips and Gas Pixel Detector (GPD). This design employs a sentinel pixel detection…
We have been developing event-driven SOI Pixel Detectors, named `XRPIX' (X-Ray soiPIXel) based on the silicon-on-insulator (SOI) pixel technology, for the future X-ray astronomical satellite with wide band coverage from 0.5 keV to 40 keV.…
Imaging sensors made from an ionization target layer of amorphous selenium (aSe) coupled to a silicon complementary metal-oxide-semiconductor (CMOS) active pixel array for charge readout are a promising technology for neutrino physics. The…
Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations…
A high-granularity telescope system with a large sensitive area and low material budget has been developed for high-energy heavy ion beam tests. The telescope consists of nine layers of silicon microstrip detectors (SSDs), whose performance…
The sensitivity of next-generation gravitational-wave detectors such as Advanced LIGO and LCGT should be limited mostly by quantum noise with an expected technical progress to reduce seismic noise and thermal noise. Those detectors will…
A new particle detector with sub-nanosecond time resolution capable of working in high-rate environment (rate capability of the order of $MHz/ cm^2$) is under developmnet. Semiconductive electrodes with resistivity $\rho$ up to $10^8…
A monolithic silicon pixel ASIC prototype, produced in 2024 as part of the Horizon 2020 MONOLITH ERC Advanced project, was tested with a 120 GeV/c pion beam. The ASIC features a matrix of hexagonal pixels with a 100 \mu m pitch, read by…
This paper introduces a thermal infrared detector utilizing a nano-optomechanical silicon nitride (SiN) resonator, equipped with a free-space impedance-matched (FSIM) absorber composed of a platinum (Pt) thin film, offering a broadband…
We are developing large TES arrays in combination with FDM readout for the next generation of X-ray space observatories. For operation under AC-bias, the TESs have to be carefully designed and optimized. In particular, the use of high…
A silicon carbide PIN detector was fabricated and its radiation tolerance under Ta heavy ion irradiation of 2370 MeV was evaluated. Its electrical properties, charge collection performance and time resolution of $\beta$-particles…
As the Chinese Spallation Neutron Source enters Phase II, the increase in proton beam power will lead to a further boost in the intensity of pulsed neutron beams. To address the demand for higher event-rate readout electronics for…
Multi-pixel fast silicon detectors represent the enabling technology for the next generation of space-borne experiments devoted to high-resolution spectral-timing studies of low-flux compact cosmic sources. Several imaging detectors based…