Related papers: alpha-Ta Films on c-plane Sapphire with Enhanced M…
Thin epitaxial films of metals on insulating substrates are essential for many applications, as conducting layers, in magnetic devices or as templates for further growth. In this work, we report on the growth of epitaxial Ru films on…
Whether or not epitaxially grown superconducting films have the same bulk-like superconducting properties is an important concern. We report the structure and the electronic properties of epitaxially grown Ba(Fe1-xCox)2As2 films using…
Thin films of MgB2 superconductor were prepared by three different procedures on sapphire and silicon substrates. Boron thin films, ex-situ annealed in magnesium vapour, resulted in textured polycrystalline films with crystal dimensions…
Al2O3 thin films have been deposited at substrate temperatures between 500{\deg}C to 600{\deg}C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films…
Phase pure \b{eta}-(AlxGa1-x)2O3 thin films are grown on (001) oriented \b{eta}-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By systematically tuning the precursor molar flow rates, the epitaxial growth of coherently…
5$\mu$m thick NdFeB films have been sputtered onto 100 mm Si substrates using high rate sputtering (18 $\mu$m/h). Films were deposited at ≤ 500 C and then annealed at 750 C for 10 minutes. While films deposited at temperatures up to…
The kinetics of the $\kappa$ to $\beta$-Ga$_2$O$_3$ phase transformation were investigated in five batches of nominally phase-pure $\kappa$-Ga2O3 thin films heteroepitaxially grown on c-plane sapphire, with film thickness ranging from 700…
TaN thin film is an attractive interlayer as well as a diffusion barrier layer in [FeN/TaN](n) multilayers for the application as potential write-head materials in high-density magnetic recording. We synthesized two series of TaN films on…
$\beta$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ has gained intensive interests of research and application as an ultrawide bandgap semiconductor. Epitaxial growth technique of the $\beta$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ thin film possesses a…
We report on the chemically stabilized epitaxial w-BN thin film grown on c-plane sapphire by pulsed laser deposition under slow kinetic condition. Traces of no other allotropes such as cubic (c) or hexagonal (h) BN phases are present.…
Thin films of the high-temperature superconductor HgBa$_2$CaCu$_2$O$_{6+\delta}$ have been prepared on SrTiO$_3$ substrates by pulsed-laser deposition of precursor films and subsequent annealing in mercury-vapor atmosphere. The…
Nb3Sn films were fabricated by multilayer sequential sputtering on Nb at substrate temperatures ranging from room temperature to 250 {\deg}C. The multilayers were then annealed inside a separate vacuum furnace at 950 {\deg}C for 3h. The…
We report on the synthesis and characterization of nanocrystalline delta-MoN by crystallization of amorphous thin films grown on (100) Si by reactive sputtering at room temperature. Films with chemical composition MoN were grown using a…
We have optimized the growth of superconducting TaN thin films on \ch{SiO2} substrates via dc magnetron sputtering and extract a maximum superconducting transition temperature of $T_{\mathrm{c}}=5$ K as well as a maximum critical field…
We report on fully epitaxial FeSe0.5Te0.5 (FST) thin films with high-quality grown on CaF2 (00l) substrate at a low temperature of 300{\deg}C by pulsed laser deposition. The transport Jc of thin films is up to 1.36 MA/cm2 in self-field and…
Thin films of $ \beta- $tungsten host superconductivity in the presence of strong spin-orbit coupling. This non-equilibrium crystalline phase of tungsten has attracted considerable attention in recent years due to its giant spin Hall effect…
We report the successful fabrication of superconducting tantalum nitride (TaN) thin films using a pulsed laser deposition technique with 1064 nm radiation. Films with thickness $ \sim $ 100 nm deposited on MgO (100) single crystals and on…
Progress in superconducting device and detector technologies over the past decade have realized practical applications in quantum computers, detectors for far-infrared telescopes, and optical communications. Superconducting thin film…
We studied the low temperature (T<130K) growth of Ag on Si(001) and Si(111) flat surfaces prepared by Si homo epitaxy with the aim to achieve thin metallic films. The band structure and morphology of the Ag overlayers have been investigated…
We have used Raman spectroscopy to study indium nitride thin films grown by molecular beam epitaxy on (111) silicon substrates at temperatures between 450 and 550 C. The Raman spectra show well defined peaks at 443, 475, 491, and 591…